MC74HCT574ADWG ON Semiconductor

MC74HCT574A Octal 3-State Noninverting D Flip-Flop with LSTTL-Compatible Inputs HighPerformance SiliconGate CMOS MC74HCT574A Design Criteria Value Units Internal Gate Count* 71.5 ea Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 W Speed Power Product 0.0075 pJ *Equivalent to a twoinput NAND gate. MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V in CC fields. However, precautions must be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA in voltages to this highimpedance cir- I DC Output Current, per Pin 35 mA cuit. For proper operation, V and out in V should be constrained to the out I DC Supply Current, V and GND Pins 75 mA CC CC range GND (V or V ) V . in out CC P Power Dissipation in Still Air, SOIC Package 500 mW D Unused inputs must always be tied to an appropriate logic voltage T Storage Temperature 65 to +150 C stg level (e.g., either GND or V ). CC T Lead Temperature, 1 mm from Case for 10 secs C L Unused outputs must be left open. (SOIC Package) 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 4.5 5.5 V CC V , V DC Input Voltage, Output Voltage 0 V V in out CC (Referenced to GND) T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time (Figure 2) 0 500 ns r f Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.