MC74LVXT8051 Analog Multiplexer/ Demultiplexer HighPerformance SiliconGate CMOS The MC74LVXT8051 utilizes silicongate CMOS technology to MC74LVXT8051 13 X0 14 X1 15 3 X2 COMMON X ANALOG 12 OUTPUT/ MULTIPLEXER/ X3 INPUTS/ 1 INPUT DEMULTIPLEXER OUTPUTS X4 5 X5 2 X6 4 X7 11 A CHANNEL 10 B SELECT 9 INPUTS C PIN 16 = V CC 6 PIN 8 = GND ENABLE Figure 1. LOGIC DIAGRAM SinglePole, 8Position Plus Common Off FUNCTION TABLE MC74LVXT8051 Control Inputs Select Enable CBA ON Channels L L L L X0 L L L H X1 L L H L X2 L L H H X3 L H L L X4 L H L H X5 L H H L X6 L H H H X7 H X X X NONE X = Dont Care MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V Positive DC Supply Voltage (Referenced to GND) 0.5 to + 7.0 V CC due to high static voltages or electric V Analog Input Voltage 0.5 to V + 0.5 V fields. However, precautions must IS CC be taken to avoid applications of any V Digital Input Voltage (Referenced to GND) 0.5 to V + 0.5 V in CC voltage higher than maximum rated I DC Current, Into or Out of Any Pin 20 mA voltages to this highimpedance circuit. For proper operation, V and in P Power Dissipation in Still Air, SOIC Package 500 mW D V should be constrained to the out TSSOP Package 450 range GND (V or V ) V . in out CC Unused inputs must always be T Storage Temperature Range 65 to + 150 C stg tied to an appropriate logic voltage T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L level (e.g., either GND or V ). CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of Unused outputs must be left open. these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C