MC74VHCT32A Quad 2-Input OR Gate / CMOS Logic Level Shifter with LSTTL Compatible Inputs The MC74VHCT32A is an advanced high speed CMOS 2input www.onsemi.com OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. MARKING The internal circuit is composed of three stages, including a buffer DIAGRAMS output which provides high noise immunity and stable output. 14 The device input is compatible with TTLtype input thresholds and SOIC14 VHCT32AG the output has a full 5.0 V CMOS level output swing. The input D SUFFIX AWLYWW protection circuitry on this device allows overvoltage tolerance on the CASE 751A 1 1 input, allowing the device to be used as a logiclevel translator from 3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic 14 to 3.0 V CMOS Logic while operating at the highvoltage power VHCT TSSOP14 supply. 32A DT SUFFIX The MC74VHCT32A input structure provides protection when ALYW CASE 948G voltages up to 7.0 V are applied, regardless of the supply voltage. This 1 allows the MC74VHCT32A to be used to interface 5.0 V circuits to 1 3.0 V circuits. The output structures also provide protection when A = Assembly Location V = 0 V. These input and output structures help prevent device CC WL, L = Wafer Lot destruction caused by supply voltage input/output voltage mismatch, Y = Year battery backup, hot insertion, etc. WW, W = Work Week G or = PbFree Package Features (Note: Microdot may be in either location) High Speed: t = 3.8 ns (Typ) at V = 5.0 V PD CC For additional marking information, refer to Low Power Dissipation: I = 2 A (Max) at T = 25C CC A Application Note AND8002/D. TTLCompatible Inputs: V = 0.8 V V = 2.0 V IL IH Power Down Protection Provided on Inputs Balanced Propagation Delays ORDERING INFORMATION Designed for 2.0 V to 5.5 V Operating Range See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Low Noise: V = 0.8 V (Max) OLP Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model > 2000 V Machine Model > 200 V NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ100 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: January, 2019 Rev. 5 MC74VHCT32A/DMC74VHCT32A 1 A1 V B4 A4 Y4 B3 A3 Y3 3 CC Y1 2 14 13 12 11 10 9 8 B1 4 A2 6 Y2 5 B2 Y = A B 9 A3 8 Y3 10 1 2 34567 B3 A1 B1 Y1 A2 B2 Y2 GND 12 A4 11 Y4 13 B4 Figure 1. Pin Connection and Marking Diagram (Top View) Figure 2. Logic Diagram Table 1. FUNCTION TABLE Inputs Output A B Y L L L L H H H L H H H H MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V in V DC Output Voltage V = 0 0.5 to +7.0 V out CC 0.5 to V + 0.5 High or Low State CC I Input Diode Current 20 mA IK I Output Diode Current (V < GND V > V ) 20 mA OK OUT OUT CC I DC Output Current, per Pin 25 mA out I DC Supply Current, V and GND Pins 50 mA CC CC P Power Dissipation in Still Air, SOIC Package 500 mW D 450 TSSOP Package T Storage Temperature 65 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this highimpedance circuit. For proper operation, V and V should be constrained to the range GND (V or V ) V . Unused inputs must in out in out CC always be tied to an appropriate logic voltage level (e.g., either GND or V ). Unused outputs must be left open. CC Derating SOIC Package: 7 mW/C from 65 to 125C TSSOP Package: 6.1 mW/C from 65 to 125C www.onsemi.com 2