MC74VHCT74ADTR2G ON Semiconductor

MC74VHCT74A Dual D-Type Flip-Flop with Set and Reset The MC74VHCT74A is an advanced high speed CMOS Dtype flipflop fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL MC74VHCT74A MAXIMUM RATINGS SymbolParameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage 0.5 to + 7.0 V CC due to high static voltages or electric V DC Input Voltage 0.5 to + 7.0 V fields. However, precautions must in be taken to avoid applications of any V DC Output Voltage V = 0 0.5 to + 7.0 V out CC voltage higher than maximum rated High or Low State 0.5 to V + 0.5 CC voltages to this highimpedance cir- I Input Diode Current 20 mA cuit. For proper operation, V and IK in V should be constrained to the out I Output Diode Current (V < GND V > V ) 20 mA OK OUT OUT CC range GND (V or V ) V . in out CC I DC Output Current, per Pin 25 mA Unused inputs must always be out tied to an appropriate logic voltage I DC Supply Current, V and GND Pins 50 mA CC CC level (e.g., either GND or V ). CC Unused outputs must be left open. P Power Dissipation in Still Air, SOIC Packages 500 mW D TSSOP Package 450 T Storage Temperature 65 to + 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Derating SOIC Packages: 7 mW/C from 65 to 125C TSSOP Package: 6.1 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 4.5 5.5 V CC V DC Input Voltage 0 5.5 V in V DC Output Voltage V = 0 0 5.5 V out CC High or Low State 0 V CC T Operating Temperature 55 + 125 C A t , t Input Rise and Fall Time V =5.0 V 0.5 V 0 20 ns/V r f CC DC ELECTRICAL CHARACTERISTICS T = 25C T = 55 to 125C A A V CC Symbol Parameter Test Conditions V Min Typ Max Min Max Unit V Minimum HighLevel Input Voltage 4.5 to 5.5 2.0 2.0 V IH V Maximum LowLevel Input Voltage 4.5 to 5.5 0.8 0.8 V IL V Minimum HighLevel Output I = 50 A 4.5 4.4 4.5 4.4 V OH OH Voltage I = 8 mA 4.5 3.94 3.80 V = V or V OH in IH IL V Maximum LowLevel Output 4.5 0.0 0.1 0.1 V I = 50 A OL OL Voltage I = 8 mA 4.5 0.36 0.44 V = V or V OL in IH IL I Maximum Input Leakage Current V = 5.5 V or GND 0 to 5.5 0.1 1.0 A in in I Maximum Quiescent Supply Current V = V or GND 5.5 2.0 20.0 A CC in CC I Quiescent Supply Current Per Input: V = 3.4 V 5.5 1.35 1.50 mA CCT IN Other Input: V or CC GND I Output Leakage Current V = 5.5 V 0 0.5 5.0 A OPD OUT