MCR22-2RL1G ON Semiconductor

MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low power MCR22 6, MCR228 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current I , I DRM RRM (V = Rated V or V R = 1 k )T = 25C 10 A AK DRM RRM GK C T = 110C 200 A C ON CHARACTERISTICS Peak Forward OnState Voltage (Note 2) V 1.2 1.7 V TM (I = 1 A Peak) TM Gate Trigger Current (Continuous dc) (Note 3) T = 25C I 30 200 A C GT (V = 6 Vdc, R = 100 )T = 40C AK L C 500 Gate Trigger Voltage (Continuous dc) (Note 3) T = 25C V 0.8 V C GT (V = 7 Vdc, R = 100 )T = 40C 1.2 AK L C Gate Non Trigger Voltage V 0.1 V GD (V = 12 Vdc, R = 100 )T = 110C AK L C Holding Current I mA H (V = 12 Vdc, R = 1k )T = 25C 2.0 5.0 AK GK C 10 Initiating Current = 20 mA T = 40C C DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage (R = 1k ) dv/dt 25 V/ s GK (T = 110C) C 2. Pulse Width =1.0 ms, Duty Cycle 1%. 3. R Current not included in measurement. GK Voltage Current Characteristic of SCR + Current Anode + V Symbol Parameter TM V Peak Repetitive Off State Forward Voltage DRM on state I Peak Forward Blocking Current DRM I H I at V RRM RRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak on State Voltage TM + Voltage I Holding Current H I at V Reverse Blocking Region DRM DRM (off state) Forward Blocking Region (off state) Reverse Avalanche Region Anode