X-On Electronics has gained recognition as a prominent supplier of MGSF1N02LT1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. MGSF1N02LT1 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MGSF1N02LT1 ON Semiconductor

MGSF1N02LT1 electronic component of ON Semiconductor
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See Product Specifications
Part No.MGSF1N02LT1
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 20V 0.75A 3-Pin SOT-23 T/R
Datasheet: MGSF1N02LT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
17: USD 1.9556 ea
Line Total: USD 33.25 
Availability - 5023
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 17  Multiples: 1
Pack Size: 1
Availability Price Quantity
5023
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 17
Multiples : 1
17 : USD 1.9556
25 : USD 1.7194
50 : USD 1.2863
100 : USD 1.0894
500 : USD 0.9319
1000 : USD 0.9056

   
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RoHS - XON
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We are delighted to provide the MGSF1N02LT1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MGSF1N02LT1 and other electronic components in the MOSFETs category and beyond.

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MGSF1N02L, MVGSF1N02L MOSFET - Power: 750 mAmps, 20 Volts NChannel SOT23 These miniature surface mount MOSFETs low R assure DS(on) www.onsemi.com minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical 750 mAMPS, 20 VOLTS applications are dcdc converters and power management in portable R = 90 m and batterypowered products such as computers, printers, PCMCIA DS(on) cards, cellular and cordless telephones. NChannel Features 3 Low R Provides Higher Efficiency and Extends Battery Life DS(on) Miniature SOT23 Surface Mount Package Saves Board Space MVGSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable* These Devices are PbFree and are RoHS Compliant 2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM/ PIN ASSIGNMENT Rating Symbol Value Unit DraintoSource Voltage V 20 Vdc DSS 3 Drain GatetoSource Voltage Continuous V 20 Vdc GS 1 Drain Current SOT23 N2 M I 750 mA Continuous T = 25C D A CASE 318 I 2000 Pulsed Drain Current (t 10 s) DM p STYLE 21 Total Power Dissipation T = 25C P 400 mW A D 1 2 Gate Source Operating and Storage Temperature Range T , T 55 to 150 C J stg Thermal Resistance, JunctiontoAmbient 300 C/W R JA N2 = Device Code M = Date Code* Maximum Lead Temperature for Soldering T 260 C L = PbFree Package Purposes, 1/8 from case for 10 seconds (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation and overbar may vary device. If any of these limits are exceeded, device functionality should not be depending upon manufacturing location. assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping MGSF1N02LT1G SOT23 3000 / Tape & (PbFree) Reel MVGSF1N02LT1G* SOT23 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1996 1 Publication Order Number: May, 2019 Rev. 7 MGSF1N02LT1/DMGSF1N02L, MVGSF1N02L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 20 Vdc (BR)DSS (V = 0 Vdc, I = 10 Adc) GS D Zero Gate Voltage Drain Current I Adc DSS (V = 20 Vdc, V = 0 Vdc) 1.0 DS GS (V = 20 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage V 1.0 1.7 2.4 Vdc GS(th) (V = V , I = 250 Adc) DS GS D Static DraintoSource OnResistance r DS(on) (V = 10 Vdc, I = 1.2 Adc) 0.075 0.090 GS D (V = 4.5 Vdc, I = 1.0 Adc) 0.115 0.130 GS D DYNAMIC CHARACTERISTICS Input Capacitance (V = 5.0 Vdc) C 125 pF DS iss Output Capacitance (V = 5.0 Vdc) C 120 DS oss Transfer Capacitance (V = 5.0 Vdc) C 45 DG rss SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 2.5 ns d(on) Rise Time t 1.0 (V = 15 Vdc, I = 1.0 Adc, r DD D R = 50 ) L TurnOff Delay Time t 16 d(off) Fall Time t 8.0 f Gate Charge (See Figure 6) Q 6000 pC T SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current I 0.6 A S Pulsed Current I 0.75 SM Forward Voltage (Note 2) V 0.8 V SD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 2.5 3 V = 10 V DS 4 V 3.25 V 2.5 3.5 V 2 2 -55C 1.5 V = 3.0 V GS 1.5 T = 150C 1 J 2.75 V 1 0.5 2.5 V 0.5 25C 2.25 V 0 0 1 1.5 2 2.5 3 3.5 02134576 8910 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 1. Transfer Characteristics Figure 2. OnRegion Characteristics www.onsemi.com 2 I , DRAIN CURRENT (AMPS) D I , DRAIN CURRENT (AMPS) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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