X-On Electronics has gained recognition as a prominent supplier of MGSF2N02ELT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. MGSF2N02ELT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MGSF2N02ELT1G ON Semiconductor

MGSF2N02ELT1G electronic component of ON Semiconductor
MGSF2N02ELT1G ON Semiconductor
MGSF2N02ELT1G MOSFETs
MGSF2N02ELT1G  Semiconductors

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See Product Specifications
Part No. MGSF2N02ELT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SOT23 20V 2.8A 85mOhm
Datasheet: MGSF2N02ELT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1153 ea
Line Total: USD 345.9 
Availability - 11640
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1238
6000 : USD 0.1213
9000 : USD 0.1194
12000 : USD 0.1188
27000 : USD 0.1181
51000 : USD 0.1175
102000 : USD 0.117
150000 : USD 0.1164

8
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 0.3631
10 : USD 0.2931
30 : USD 0.2542
100 : USD 0.198
500 : USD 0.1627
1000 : USD 0.1543

120
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.574
5 : USD 0.4676
10 : USD 0.406
50 : USD 0.2744
87 : USD 0.2058

6364
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 206
Multiples : 1
206 : USD 0.3151
353 : USD 0.184
359 : USD 0.181
500 : USD 0.1792
1000 : USD 0.166
3000 : USD 0.142
6000 : USD 0.1243

2910
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1609
6000 : USD 0.1576
9000 : USD 0.1552
12000 : USD 0.1544
27000 : USD 0.1536

11640
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1153

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the MGSF2N02ELT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MGSF2N02ELT1G and other electronic components in the MOSFETs category and beyond.

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The MGSF2N02ELT1G is a N-Channel MOSFET package from ON Semiconductor, housed in a SOT23-3 package. It is designed to handle a maximum DC Voltage of 20V and a maximum Drain Current of 2.8A, with a maximum Drain-Source On-Resistance (RDS) of 85mOhm. This product is suitable for applications such as boost converters, inverters, motor controllers and DC/DC converters due to its high switching speed and low gate threshold voltage. It also has very low gate-source capacitance and gate charge characteristics, ensuring quick action.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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