AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features V 40V DSS Advanced Process Technology R typ. DS(on) 1.5m Ultra Low On-Resistance max. 2.0m 175C Operating Temperature I 270A D (Silicon Limited) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 195A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this S S S D HEXFET Power MOSFET utilizes the latest processing G D G G techniques to achieve extremely low on-resistance per silicon 2 area. Additional features of this design are a 175C junction TO-220AB D Pak TO-262 AUIRF2804 operating temperature, fast switching speed and improved AUIRF2804S AUIRF2804L repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in G D S Automotive applications and wide variety of other applications. Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRF2804 TO-220 Tube 50 AUIRF2804 AUIRF2804L TO-262 Tube 50 AUIRF2804L Tube 50 AUIRF2804S 2 AUIRF2804S D -Pak Tape and Reel Left 800 AUIRF2804STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 270 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 190 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I Pulsed Drain Current 1080 DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 540 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 1160 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.50 R JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W R Junction-to-Ambient 62 JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF2804/S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.031 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R SMD Static Drain-to-Source On-Resistance 1.5 2.0 V = 10V, I = 75A DS(on) GS D m R TO-220 Static Drain-to-Source On-Resistance 1.8 2.3 V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 130 S V = 10V, I = 75A DS D 20 V =40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 160 240 I = 75A g D Q Gate-to-Source Charge 41 62 nC V = 32V gs DS Q Gate-to-Drain Charge 66 99 V = 10V gd GS t Turn-On Delay Time 13 V = 20V d(on) DD t Rise Time 120 I = 75A r D ns t Turn-Off Delay Time 130 R = 2.5 d(off) G t Fall Time 130 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 6450 V = 0V iss GS C Output Capacitance 1690 V = 25V oss DS C Reverse Transfer Capacitance 840 = 1.0MHz, See Fig. 5 rss pF C Output Capacitance 5350 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 1520 V = 0V, V = 32V = 1.0MHz oss GS DS C Effective Output Capacitance 2210 V = 0V, V = 0V to 32V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 270 S (Body Diode) showing the A Pulsed Source Current integral reverse I 1080 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS t Reverse Recovery Time 56 84 ns T = 25C ,I = 75A, V = 20V rr J F DD Q Reverse Recovery Charge 67 100 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.24mH, R = 25 , I = 75A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS This value determined from sample failure population, starting T = 25C, L = 0.24mH, R = 25, I = 75A, V =10V. J G AS GS 2 This is applied to D Pak When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 Max R for D Pak and TO-262 (SMD) devices. DS(on) TO-220 device will have an Rth value of 0.45C/W. All AC and DC test condition based on old Package limitation current = 75A. 2 2015-9-30