PD - 97741 AUTOMOTIVE GRADE AUIRF3205 Features HEXFET Power MOSFET D V 55V (BR)DSS R max. 8.0m DS(on) G % & I 110A D (Silicon Limited) % S I 75A D (Package Limited) ( % ) *& + , - D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power S D MOSFETs utilizes the latest processing techniques G to achieve low on-resistance per silicon area. This TO-220AB benefit combined with the fast switching speed and AUIRF3205 ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer G D S with an extremely efficient and reliable device for Gate Drain Source use in Automotive and a wide variety of other appli- cations. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 110 GS D C Continuous Drain Current, V 10V (Silicon Limited) 80 I T = 100C A GS D C Continuous Drain Current, V 10V (Package Limited) 75 I T = 25C GS D C Pulsed Drain Current 390 I DM 200 P T = 25C Power Dissipation W D C 1.3 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy (Thermally Limited) 264 mJ AS I 62 AR Avalanche Current A E 20 AR Repetitive Avalanche Energy mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS RJunction-to-Ambient 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRF3205 Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 8.0 V = 10V, I = 62A m GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A DS GS D gfs Forward Transconductance 44 S V = 25V, I = 62A DS D I DSS Drain-to-Source Leakage Current 25 A V = 55V, V = 0V DS GS 250 V = 44V, V = 0V, T = 150C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 146 I = 62A D Q Gate-to-Source Charge 35 nC V = 44V gs DS Q gd Gate-to-Drain Mille) Charge 54 V = 10V, See Fig. 6 & 13 GS t d(on) Turn-On Delay Time 14 V = 28V DD t Rise Time 101 I = 62A r D t Turn-Off Delay Time 50 ns R = 4.5 d(off) G t f Fall Time 65 V = 10V, See Fig. 10 GS L D D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 3247 V = 0V GS C Output Capacitance 781 pF V = 25V oss DS C rss Reverse Transfer Capacitance 211 = 1.0MHz, See Fig. 5 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 110 (Body Diode) A showing the G I Pulsed Source Current 390 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 62A, V = 0V SD J S GS t Reverse Recovery Time 69 104 ns T = 25C, I = 62A rr J F Q di/dt = 100A/ s Reverse Recovery Charge 143 215 nC rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time on Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Calculated continuous current based on maximum allowable Starting T = 25C, L = 138H, J junction temperature. Package limitation current is 75A. R = 25 , I = 62A. (See Figure 12) G AS This is a typical value at device destruction and represents I 62A di/d 207A/ s, V V , SD DD (BR)DSS operation outside rated limits. T 175C. J This is a calculated value limited to T = 175C. J R is measured at 2 www.irf.com