J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 MMBFJ210 J211 MMBFJ211 J212 MMBFJ212 G S G TO-92 S SOT-23 D NOTE: Source & Drain D Mark: 62V / 62W / 62X are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Drain-Gate Voltage 25 V DG V Gate-Source Voltage - 25 V GS I Forward Gate Current 10 mA GF 5 Operating and Storage Junction Temperature Range -55 to +150 T ,T C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Max Symbol Characteristic Units J210-212 *MMBFJ210-212 P Total Device Dissipation 350 225 mW D 2.8 1.8 Derate above 25C mW/C R Thermal Resistance, Junction to Case 125 C/W JC Thermal Resistance, Junction to Ambient 357 556 R C/W JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 1997 Fairchild Semiconductor Corporation J210/J211/J212/MMBFJ210/J211/J212, Rev AJ210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Gate-Source Breakdown Voltage - 25 V (BR)GSS IG = 1.0 A, V DS = 0 I Gate Reverse Current V = 15 V, V = 0 - 100 pA GSS GS DS V Gate-Source Cutoff Voltage V = 15 V, I = 1.0 nA 210 -1.0 -3.0 V GS(off) DS D 211 - 2.5 - 4.5 V 212 - 4.0 - 6.0 V ON CHARACTERISTICS I Zero-Gate Voltage Drain Current* V = 15 V, V = 0 210 2.0 15 mA DSS DS GS 211 7.0 20 mA 15 40 mA 212 SMALL SIGNAL CHARACTERISTICS g Common Source Forward VDS = 15 V, V GS = 0, f = 1.0 kHz fs Transconductance 210 4000 12,000 mhos 6000 12,000 211 mhos 7000 12,000 212 mhos g Common Source Output VDS = 15 V, V GS = 0, f = 1.0 kHz 200 mhos oss Conductance *Pulse Test: Pulse Width 300 S Typical Characteristics Parameter Interactions Common Drain-Source