MMT10B310T3G ON Semiconductor

MMT10B230T3, MMT10B260T3, MMT10B310T3 Preferred Device Thyristor Surge Protectors High Voltage Bidirectional TSPD MMT10B230T3, MMT10B260T3, MMT10B310T3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit OffState Voltage Maximum V V DM MMT10B230T3 170 MMT10B260T3 200 MMT10B310T3 270 Maximum Pulse Surge Short Circuit Current NonRepetitive A(pk) Double Exponential Decay Waveform (Notes 1 and 2) (20C to +65C) 2 x 10 sec 10 x 700 sec I 500 PPS1 10 x 1000 sec I 180 PPS2 I 100 PPS3 Maximum NonRepetitive Rate of Change of OnState Current di/dt 100 A/ s Double Exponential Waveform, R = 2.0, L = 1.5 H, C = 1.67 F, I = 110A pk Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range T 40 to +125 C J1 Blocking or Conducting State Overload Junction Temperature Maximum Conducting State Only T +175 C J2 Instantaneous Peak Power Dissipation (I = 100 A, 10x1000 sec 25C) P 4000 W pk PK Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ORDERING INFORMATION Device Package Shipping MMT10B230T3 SMB MMT10B230T3G SMB (PbFree) MMT10B260T3 SMB (12mm) Tape & Reel MMT10B260T3G SMB 2500 Units per Reel (PbFree) MMT10B310T3 SMB MMT10B310T3G SMB (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.