TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers May 2013 TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description UL Recognized (File E90700) The MOC8100M, TIL111M, and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode VDE Recognized (File 102497 for white package) driving a silicon phototransistor in a 6-pin dual in-line Add Option V (e.g., TIL111VM) package. Applications Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Appliance Sensor Systems Industrial Controls Schematic Package Outlines ANODE 1 6 BASE CATHODE 2 5 COLLECTOR 4 EMITTER NC 3 Figure 1. Schematic Figure 2. Package Outlines 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com TIL111M, TIL117M, MOC8100M Rev. 1.0.3TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Safety and Insulation Ratings As per IEC60747-5-2. This optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min.Typ.Max.Unit Installation Classications per DIN VDE 0110/1.89 Table 1 For Rated Mains Voltage < 150 V IIV RMS For Rated Mains Voltage < 300 V IIV RMS Climatic Classication 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 Input to Output Test Voltage, Method b, V 1594 PR V x 1.875 = V , 100% Production Test with IORM PR t = 1 s, Partial Discharge < 5 pC m Input to Output Test Voltage, Method a, 1275 V x 1.5 = V , Type and Sample Test with IORM PR t = 60 s, Partial Discharge < 5 pC m Maximum Working Insulation Voltage 850 V V IORM peak V Highest Allowable Over Voltage 6000 V IOTM peak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm 9 R Insulation Resistance at T , V = 500 V 10 IO S IO 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com TIL111M, TIL117M, MOC8100M Rev. 1.0.3 2