MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection FEATURES 1 6 A B Isolation test voltage, 5300 V RMS No base terminal connection for improved C 2 5 C common mode interface immunity Long term stability NC 3 4 E Industry standard dual in line package Compliant to RoHS Directive 2002/95/EC and in i179009-1 accordance to WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS The MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 family optocoupler consisting of a gallium UL1577, file no. E52744 system code H or J, double arsenide infrared emitting diode optically coupled to a protection silicon planar phototransistor detector in a plastic plug-in CSA 93751 DIP-6 package. BSI IEC 60950 IEC 60065 The coupling device is suitable for signal transmission DIN EN 60747-5-5 (VDE 0884) available with option 1 between two electrically separated circuits. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. The base terminal of the MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 is not connected, resulting in a substantially improved common mode interference immunity. ORDERING INFORMATION DIP- Option 6 MO C 8 1 0 - X 0 T PART NUMBER CTR PACKAGE OPTION TAPE 10.16 mm 7.62 mm BIN AND Option 7 Option 9 REEL > 0.1 mm > 0.7 mm CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133 DIP-6 MOC8101 MOC8102 MOC8103 MOC8104 MOC8105 DIP-6, 400 mil, option 6 - MOC8102-X006 - - - SMD-6, option 9 MOC8101-X009 MOC8102-X009 - - - VDE, UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133 DIP-6 MOC8101-X001 - MOC8103-X001 - - DIP-6, 400 mil - MOC8102-X016 - MOC8104-X016 - SMD-6, option 7 MOC8101-X017T MOC8102-X017T - - - SMD-6, option 9 - - - MOC8104-X019T - Note Additional options may be possible, please contact sales office. Rev. 1.6, 13-Sep-11 Document Number: 83660 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6.0 V R Forward continuous current I 60 mA F Surge forward current t 10 s I 2.5 A FSM Power dissipation P 100 mW diss Derate linearly from 25C 1.33 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter collector breakdown voltage BV 7.0 V ECO Collector current I 50 mA C Derate linearly from 25C 2.0 mW/C Power dissipation P 150 mW diss COUPLER Isolation test voltage V 5300 V ISO RMS 7.0 mm Creepage distance (2) 8.0 mm 7.0 mm Clearance distance (2) 8.0 mm Isolation thickness between 0.4 mm emitter and detector Comparative tracking index per CTI 175 DIN IEC 112/VDE 0303, part 1 12 Isolation resistance V = 500 V R 10 IO IO Derate linearly from 25 C 3.33 mW/C Total power dissipation P 250 mW tot Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb Junction temperature T 100 C j max. 10 s, dip soldering: (1) Soldering temperature T 260 C sld distance to seating plane 1.5 mm Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). (2) Applies to wide bending option 6. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V 1.25 1.5 V F F Breakdown voltage I = 10 A V 6.0 V R BR Reverse current V = 6.0 V I 0.01 10 A R R Capacitance V = 0 V, f = 1.0 MHz C 25 pF R O Thermal resistance R 750 K/W thja OUTPUT Collector emitter capacitance V = 5.0 V, f = 1.0 MHz C 5.2 pF CE CE V = 10 V, T = 25 C MOC8101 I 1.0 50 nA CE amp CEO1 Collector emitter dark current V = 10 V, T = 100 C MOC8102 I 1.0 A CE amp CEO1 Collector emitter breakdown voltage I = 1.0 mA BV 30 V C CEO Emitter collector breakdown voltage I = 100 ABV 7.0 V E ECO Thermal resistance R 500 K/W thja COUPLER Saturation voltage collector emitter I = 5.0 mA V 0.25 0.4 V F CEsat Coupling capacitance C 0.6 pF C Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.6, 13-Sep-11 Document Number: 83660 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000