MPSA42 / MMBTA42 / PZTA42 MPSA42 MMBTA42 PZTA42 C C E E C B C TO-92 B B SOT-23 SOT-223 E Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 300 V V Collector-Base Voltage 300 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSA42 *MMBTA42 **PZTA42 P Total Device Dissipation 625 350 1,000 mW D 5.0 2.8 8.0 Derate above 25C mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC Thermal Resistance, Junction to Ambient 200 357 125 R C/W JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 2 **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm mounting pad for the collector lead min. 6 cm . 1997 Fairchild Semiconductor CorporationMPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 300 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 300 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 A, I = 0 6.0 V (BR)EBO E C I Collector-Cutoff Current V = 200 V, I = 0 0.1 A CBO CB E I Emitter-Cutoff Current V = 6.0 V, I = 0 0.1 A EBO EB C ON CHARACTERISTICS* h DC Current Gain I = 1.0 mA, V = 10 V 25 FE C CE I = 10 mA, V = 10 V 40 C CE I = 30 mA, V = 10 V 40 C CE V Collector-Emitter Saturation Voltage I = 20 mA, I = 2.0 mA 0.5 V CE(sat) C B Base-Emitter Saturation Voltage I = 20 mA, I = 2.0 mA 0.9 V V C B BE(sat) SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product I = 10 mA, V = 20 V, 50 MHz T C CE f = 100 MHz Collector-Base Capacitance V = 20 V, I = 0, f = 1.0 MHz 3.0 pF C CB E cb *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 3 Spice Model NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5 Vtf=20 Xtf=150 Rb=10) Typical Characteristics Collector-Emitter Saturation DC Current Gain vs Collector Current Voltage vs Collector Current 0.3 140 = 10 0.25 120 125 C 100 0.2 80 25 C 125 C 0.15 60 25 C 0.1 - 40 C 40 V = 5V CE - 40 C 20 0.05 0.1 1 10 100 0.1 1 10 100 I - COLLECTOR CURRENT (mA) C I - COLLECTOR CURRENT (mA) C FE CESAT h - DC CURRE NT GAIN V - COLLECTOR-EMITTER VOLTAGE (V)