MPSA44 Preferred Device High Voltage Transistor NPN Silicon Features MPSA44 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V 400 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B CollectorEmitter Breakdown Voltage V 500 Vdc (BR)CES (I = 100 Adc, V = 0) C BE CollectorBase Breakdown Voltage V 500 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 6.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 0.1 Adc CBO (V = 400 Vdc, I = 0) CB E Collector Cutoff Current I 500 nAdc CES (V = 400 Vdc, V = 0) CE BE Emitter Cutoff Current I 0.1 Adc EBO (V = 4.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain (Note 1) h FE (I = 1.0 mAdc, V = 10 Vdc) 40 C CE (I = 10 mAdc, V = 10 Vdc) 50 200 C CE (I = 50 mAdc, V = 10 Vdc) 45 C CE (I = 100 mAdc, V = 10 Vdc) 40 C CE CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 1.0 mAdc, I = 0.1 mAdc) 0.4 C B (I = 10 mAdc, I = 1.0 mAdc) 0.5 C B (I = 50 mAdc, I = 5.0 mAdc) 0.75 C B BaseEmitter Saturation Voltage V 0.75 Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C 7.0 pF obo (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 130 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C SmallSignal Current Gain h 1.0 fe (I = 10 mAdc, V = 10 Vdc, f = 20 MHz) C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping MPSA44 TO92 5000 Units / Box MPSA44G TO92 5000 Units / Box (PbFree) MPSA44RL1 TO92 2000 / Tape & Reel MPSA44RL1G TO92 2000 / Tape & Reel (PbFree) MPSA44RLRA TO92 2000 / Tape & Reel MPSA44RLRAG TO92 2000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.