X-On Electronics has gained recognition as a prominent supplier of MUN5111T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5111T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5111T1G ON Semiconductor

MUN5111T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MUN5111T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased SS BR XSTR PNP 50V
Datasheet: MUN5111T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0275 ea
Line Total: USD 82.5 
Availability - 23280
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
21422
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1183
10 : USD 0.0828
25 : USD 0.082
100 : USD 0.0493
250 : USD 0.0489
500 : USD 0.0362
1000 : USD 0.0308
3000 : USD 0.0298
6000 : USD 0.0289
15000 : USD 0.0278

23280
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0275
6000 : USD 0.0264
9000 : USD 0.0222
15000 : USD 0.022
21000 : USD 0.0217
30000 : USD 0.0185

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Qualification
Brand
Power Dissipation
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Mxhts
Pd - Power Dissipation
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We are delighted to provide the MUN5111T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5111T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 k , R2 = 10 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc 1 CEO Collector Current Continuous I 100 mAdc C SC75 XX M CASE 463 Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 10 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: July, 2018 Rev. 9 DTA114E/DMUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2111T1G, SMUN2111T1G 6A SC59 3000 / Tape & Reel (PbFree) SMUN2111T3G 6A SC59 10000 / Tape & Reel (PbFree) MMUN2111LT1G, SMMUN2111LT1G A6A SOT23 3000 / Tape & Reel (PbFree) MMUN2111LT3G, SMMUN2111LT3G A6A SOT23 10000 / Tape & Reel (PbFree) MUN5111T1G, SMUN5111T1G 6A SC70/SOT323 3000 / Tape & Reel (PbFree) DTA114EET1G, NSVDTA114EET1G 6A SC75 3000 / Tape & Reel (PbFree) DTA114EM3T5G, NSVDTA114EM3T5G 6A SOT723 8000 / Tape & Reel (PbFree) NSBA114EF3T5G F SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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