X-On Electronics has gained recognition as a prominent supplier of MUN5114DW1T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5114DW1T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5114DW1T1G ON Semiconductor

MUN5114DW1T1G electronic component of ON Semiconductor
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Part No.MUN5114DW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual PNP
Datasheet: MUN5114DW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.181 ea
Line Total: USD 0.18 
Availability - 14593
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23337
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1155
10 : USD 0.0734
25 : USD 0.0722
100 : USD 0.0394
250 : USD 0.039
1000 : USD 0.0389
15000 : USD 0.0388

120
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 5
Multiples : 5
5 : USD 0.0608
50 : USD 0.0594
150 : USD 0.0584
500 : USD 0.0576

14593
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.181
10 : USD 0.1129
100 : USD 0.0618
1000 : USD 0.0586
3000 : USD 0.0447
9000 : USD 0.0384
24000 : USD 0.0373

130
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 10
Multiples : 5
10 : USD 0.1125
100 : USD 0.0542
405 : USD 0.042
1105 : USD 0.0393

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
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Dc Current Gain Hfe Max
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Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
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We are delighted to provide the MUN5114DW1T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5114DW1T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5114DW1, NSBA114YDXV6, NSBA114YDP6 Dual PNP Bias Resistor Transistors www.onsemi.com R1 = 10 k , R2 = 47 k PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R 1 R device and its external resistor bias network. The Bias Resistor 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a Q base emitter resistor. The BRT eliminates these individual 2 components by integrating them into a single device. The use of a BRT R 2 R 1 can reduce both system cost and board space. Features (4) (5) (6) S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable MARKING DIAGRAMS Simplifies Circuit Design 6 Reduces Board Space SOT363 0D M Reduces Component Count CASE 419B These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 (T = 25C, common for Q1 and Q2, unless otherwise noted) 0D M A CASE 463A Rating Symbol Max Unit 1 CollectorBase Voltage V 50 Vdc CBO CollectorEmitter Voltage V 50 Vdc CEO SOT963 Collector Current Continuous I 100 mAdc M Q C CASE 527AD Input Forward Voltage V 40 Vdc IN(fwd) 1 Input Reverse Voltage V 6 Vdc IN(rev) 0D/Q = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be =PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending up- on manufacturing location. Device Package Shipping MUN5114DW1T1G, SOT363 3,000 / Tape & Reel SMUN5114DW1T1G NSBA114YDXV6T1G SOT563 4,000 / Tape & Reel NSBA114YDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2017 Rev. 1 DTA114YD/DMUN5114DW1, NSBA114YDXV6, NSBA114YDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5114DW1 (SOT363) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5114DW1 (SOT363) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, (Note 1) R 493 C/W JA Junction to Ambient (Note 2) 325 Thermal Resistance, (Note 1) R 188 C/W JL Junction to Lead (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114YDXV6 (SOT563) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, C/W R JA Junction to Ambient (Note 1) 350 NSBA114YDXV6 (SOT563) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114YDP6 (SOT963) One Junction Heated Total Device Dissipation P D T = 25C (Note 4) 231 mW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, (Note 4) R 540 C/W JA Junction to Ambient (Note 5) 464 NSBA114YDP6 (SOT963) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 mW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, (Note 4) R 369 C/W JA Junction to Ambient (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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