MUN5116DW1, NSBA143TDXV6 Dual PNP Bias Resistor Transistors R1 = 4.7 k , R2 = k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R 1 R 2 network consisting of two resistors a series base resistor and a Q 1 base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q 2 can reduce both system cost and board space. R 2 R 1 Features Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count MARKING DIAGRAMS S and NSV Prefix for Automotive and Other Applications 6 Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT363 OF M These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 419B Compliant 1 MAXIMUM RATINGS (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 SOT563 0F M Rating Symbol Max Unit CASE 463A 1 Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO OF, 0F = Specific Device Code Collector Current Continuous I 100 mAdc C M = Date Code* Input Forward Voltage V 30 Vdc IN(fwd) = Pb-Free Package Input Reverse Voltage V 5 Vdc IN(rev) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending up- device. If any of these limits are exceeded, device functionality should not be on manufacturing location. assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping MUN5116DW1T1G, SOT363 3,000/Tape & Reel SMUN5116DW1T1G NSBA143TDXV6T1G SOT563 4,000/Tape & Reel NSBA143TDXV6T5G SOT563 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: April, 2018 Rev. 1 DTA143TD/DMUN5116DW1, NSBA143TDXV6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5116DW1 (SOT363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5116DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA143TDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBA143TDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. www.onsemi.com 2