X-On Electronics has gained recognition as a prominent supplier of MUN5131T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5131T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5131T1G ON Semiconductor

Hot MUN5131T1G electronic component of ON Semiconductor
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Part No.MUN5131T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased 100mA 50V BRT PNP
Datasheet: MUN5131T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
610: USD 0.0122 ea
Line Total: USD 7.44 
Availability - 22180
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 610  Multiples: 1
Pack Size: 1
Availability Price Quantity
24902
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0935
10 : USD 0.0572
100 : USD 0.0308
1000 : USD 0.0275
3000 : USD 0.0231
9000 : USD 0.022
24000 : USD 0.022
45000 : USD 0.0176
99000 : USD 0.0176

186240
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

24250
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

81480
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

17460
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

22180
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 610
Multiples : 1
610 : USD 0.0122

58200
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

43650
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

238620
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

49470
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

   
Manufacturer
Product Category
RoHS - XON
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Configuration
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Typical Input Resistor
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Collector- Emitter Voltage VCEO Max
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Power Dissipation
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Dc Current Gain Hfe Max
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We are delighted to provide the MUN5131T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5131T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DATA SHEET www.onsemi.com PIN CONNECTIONS Digital Transistors (BRT) PIN 3 COLLECTOR R1 = 2.2 k , R2 = 2.2 k (OUTPUT) PIN 1 PNP Transistors with Monolithic Bias R1 BASE Resistor Network (INPUT) R2 PIN 2 MUN2131, MMUN2131L, EMITTER (GROUND) MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 MARKING DIAGRAMS This series of digital transistors is designed to replace a single SC59 device and its external resistor bias network. The Bias Resistor XX M CASE 318D Transistor (BRT) contains a single transistor with a monolithic bias STYLE 1 network consisting of two resistors a series base resistor and a base 1 emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. SOT23 XXX M CASE 318 Features STYLE 6 1 Simplifies Circuit Design Reduces Board Space SC70/SOT323 XX M Reduces Component Count CASE 419 STYLE 3 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 SC75 Qualified and PPAP Capable CASE 463 XX M These Devices are PbFree, Halogen Free/BFR Free and are RoHS STYLE 1 1 Compliant SOT723 MAXIMUM RATINGS (T = 25C) XX M A CASE 631AA STYLE 1 Rating Symbol Max Unit 1 SOT1123 CollectorBase Voltage V 50 Vdc CBO X M CASE 524AA 1 CollectorEmitter Voltage V 50 Vdc CEO STYLE 1 Collector Current Continuous I 100 mAdc C XXX = Specific Device Code M = Date Code* Input Forward Voltage V 12 Vdc IN(fwd) =PbFree Package Input Reverse Voltage V 10 Vdc IN(rev) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending up- device. If any of these limits are exceeded, device functionality should not be on manufacturing location. assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2021 Rev. 6 DTA123E/DMUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2131T1G 6H SC59 3000 / Tape & Reel (PbFree) MMUN2131LT1G, NSVMMUN2131LT1G* A6H SOT23 3000 / Tape & Reel (PbFree) MUN5131T1G, NSVMUN5131T1G* 6H SC70/SOT323 3000 / Tape & Reel (PbFree) DTA123EET1G 6H SC75 3000 / Tape & Reel (PbFree) DTA123EM3T5G, NSVDTA123EM3T5G* 6H SOT723 8000 / Tape & Reel (PbFree) NSBA123EF3T5G P (180)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ** (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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