X-On Electronics has gained recognition as a prominent supplier of MUN5135DW1T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5135DW1T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5135DW1T1G ON Semiconductor

MUN5135DW1T1G electronic component of ON Semiconductor
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Part No.MUN5135DW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Datasheet: MUN5135DW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0355 ea
Line Total: USD 106.5 
Availability - 26190
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
26190
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0355
6000 : USD 0.0319
18000 : USD 0.0316
30000 : USD 0.0273

28
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0496
6000 : USD 0.0446
18000 : USD 0.0442
30000 : USD 0.0382

367
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0737
100 : USD 0.0604
300 : USD 0.0529
3000 : USD 0.0486
6000 : USD 0.0447
9000 : USD 0.0425

26190
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0273

   
Manufacturer
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RoHS - XON
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Typical Input Resistor
Typical Resistor Ratio
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
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Cnhts
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Pd - Power Dissipation
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We are delighted to provide the MUN5135DW1T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5135DW1T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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P DATA SHEET www.onsemi.com Dual PNP Bias Resistor PIN CONNECTIONS Transistors (3) (2) (1) R1 = 2.2 k , R2 = 47 k PNP Transistors with Monolithic Bias R 1 R 2 Resistor Network Q 1 MUN5135DW1, Q 2 NSBA123JDXV6, R 2 R 1 NSBA123JDP6 (4) (5) (6) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias MARKING DIAGRAMS network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual 6 components by integrating them into a single device. The use of a BRT SOT363 0M M can reduce both system cost and board space. CASE 419B Features 1 Simplifies Circuit Design Reduces Board Space SOT563 Reduces Component Count CASE 463A 0M M NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT963 These Devices are PbFree, Halogen Free/BFR Free and are RoHS M CASE 527AD Compliant 1 MAXIMUM RATINGS (T = 25C, common for Q1 and Q2, unless otherwise noted) 0M/P = Specific Device Code A M = Date Code* Rating Symbol Max Unit =PbFree Package CollectorBase Voltage V 50 Vdc CBO (Note: Microdot may be in either location) CollectorEmitter Voltage V 50 Vdc CEO *Date Code orientation may vary depending up- on manufacturing location. Collector Current Continuous I 100 mAdc C Input Forward Voltage V 12 Vdc IN(fwd) Input Reverse Voltage V 5 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping MUN5135DW1T1G, SOT363 3,000 / Tape & Reel NSVMUN5135DW1T1G NSBA123JDXV6T5G SOT563 8,000 / Tape & Reel NSBA123JDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2021 Rev. 4 DTA123JD/DMUN5135DW1, NSBA123JDXV6, NSBA123JDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5135DW1 (SOT 363) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5135DW1 (SOT363) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, (Note 1) R 493 C/W JA Junction to Ambient (Note 2) 325 Thermal Resistance, (Note 1) R 188 C/W JL Junction to Lead (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA123JDXV6 (SOT563) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, C/W R JA Junction to Ambient (Note 1) 350 NSBA123JDXV6 (SOT563) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA123JDP6 (SOT963) One Junction Heated Total Device Dissipation P D T = 25C (Note 4) 231 mW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, (Note 4) R 540 C/W JA Junction to Ambient (Note 5) 464 NSBA123JDP6 (SOT963) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 mW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, (Note 4) R 369 C/W JA Junction to Ambient (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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