X-On Electronics has gained recognition as a prominent supplier of MUN5237DW1T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5237DW1T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5237DW1T1G ON Semiconductor

MUN5237DW1T1G electronic component of ON Semiconductor
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Part No.MUN5237DW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased 100mA 50V BRT Dual NPN
Datasheet: MUN5237DW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0416 ea
Line Total: USD 124.8 
Availability - 6790
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
6790
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0416
6000 : USD 0.04
12000 : USD 0.0393
27000 : USD 0.0385
51000 : USD 0.0371
102000 : USD 0.0366
150000 : USD 0.0361
252000 : USD 0.0355

8025
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1917
10 : USD 0.1289
100 : USD 0.0661
1000 : USD 0.0597
3000 : USD 0.0415
9000 : USD 0.0373

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Qualification
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MUN5237DW1T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5237DW1T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5237DW1, NSBC144WDXV6, NSBC144WDP6 Dual NPN Bias Resistor Transistors www.onsemi.com R1 = 47 k , R2 = 22 k PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R 1 device and its external resistor bias network. The Bias Resistor R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 R 1 can reduce both system cost and board space. Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count 6 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT363 7P M AEC-Q101 Qualified and PPAP Capable CASE 419B02 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 7P M (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 CASE 463A Rating Symbol Max Unit 1 Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO SOT963 V M Collector Current Continuous I 100 mAdc C CASE 527AD 1 Input Forward Voltage V 40 Vdc IN(fwd) Input Reverse Voltage V 10 Vdc IN(rev) 7P/V = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = Pb-Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending Device Package Shipping upon manufacturing location. MUN5237DW1T1G, SOT363 3,000/Tape & Reel SMUN5237DW1T1G NSBC144WDXV6T1G SOT563 4,000/Tape & Reel NSBC144WDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2017 Rev. 1 DTC144WD/DMUN5237DW1, NSBC144WDXV6, NSBC144WDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5237DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5237DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC144WDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC144WDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC144WDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC144WDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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