X-On Electronics has gained recognition as a prominent supplier of MUN5332DW1T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MUN5332DW1T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MUN5332DW1T1G ON Semiconductor

Hot MUN5332DW1T1G electronic component of ON Semiconductor
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Part No.MUN5332DW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R
Datasheet: MUN5332DW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0312 ea
Line Total: USD 0.03 
Availability - 849
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
849
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0312
10 : USD 0.0292

20918
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.165
10 : USD 0.1045
100 : USD 0.0528
1000 : USD 0.0517
3000 : USD 0.0418
9000 : USD 0.0363

849
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 256
Multiples : 1
256 : USD 0.0292

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the MUN5332DW1T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUN5332DW1T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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V MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 4.7 k , R2 = 4.7 k PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q network consisting of two resistors a series base resistor and a 1 base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. R 2 R 1 Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count S and NSV Prefix for Automotive and Other Applications 6 Requiring Unique Site and Control Change Requirements SOT363 AEC-Q101 Qualified and PPAP Capable* 32 M CASE 419B These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 MAXIMUM RATINGS (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted) A 1 2 SOT563 32 M CASE 463A Rating Symbol Max Unit 1 Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C SOT963 M CASE 527AD Input Forward Voltage V 30 Vdc IN(fwd) 1 Input Reverse Voltage V 10 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the 32/V = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code* assumed, damage may occur and reliability may be affected. = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending Device Package Shipping upon manufacturing location. MUN5332DW1T1G, SOT363 3,000/Tape & Reel NSVMUN5332DW1T1G* NSVMUN5332DW1T3G* SOT363 10,000/Tape & Reel NSBC143EPDXV6T1G SOT563 4,000/Tape & Reel NSBC143EPDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2017 Rev. 2 DTC143EP/DMUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5332DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5332DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143EPDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC143EPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143EPDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC143EPDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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