Switch-Mode Power Rectifiers MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 These stateoftheart devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. www.onsemi.com Features Ultrafast 25 ns, 50 ns and 75 ns Recovery Times ULTRAFAST RECTIFIERS 175C Operating Junction Temperature 4.0 AMPERES, 50600 VOLTS Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 600 V Shipped in Plastic Bags, 500 per Bag Available in Tape and Reel, 1500 per Reel, by Adding a RLG Suffix to the Part Number MUR460 available in Fan Fold Ammo Pak, 1000 per Box, by adding a FFG suffix to the part number These are PbFree Packages* Mechanical Characteristics: AXIAL LEAD Case: Epoxy, Molded CASE 267 STYLE 1 Weight: 1.1 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MARKING DIAGRAM Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds A Polarity: Cathode indicated by Polarity Band MUR 4xx YYWW A = Assembly Location MUR4xx = Device Number x = 05, 10, 15, 20, 40, 60 YY = Year WW = Work Week =PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2020 Rev. 16 MUR420/DMUR405, MUR410, MUR415, MUR420, MUR440, MUR460 MAXIMUM RATINGS MUR 405 410 415 420 440 460 Rating Symbol Unit Peak Repetitive Reverse Voltage V 50 100 150 200 400 600 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Square Wave) I 4.0 T = 80C 4.0 A F(AV) A (Mounting Method 3 Per Note 2) T = 40C A Nonrepetitive Peak Surge Current I 125 110 A FSM (Surge applied at rated load conditions, half wave, single phase, 60 Hz) Operating Junction Temperature & Storage Temperature T , T 65 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS MUR Rating Symbol 405 410 415 420 440 460 Unit Maximum Thermal Resistance, JunctiontoAmbient R See Note 2 C/W JA Maximum Thermal Resistance, JunctiontoCase Body 6.6 C/W JC ELECTRICAL CHARACTERISTICS MUR 405 410 415 420 440 460 Rating Symbol Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (i = 3.0 A, T = 150C) 0.71 1.05 F J (i = 3.0 A, T = 25C) 0.88 1.25 F J (i = 4.0 A, T = 25C) 0.89 1.28 F J Maximum Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 150C) 150 250 J (Rated dc Voltage, T = 25C) 5 10 J Maximum Reverse Recovery Time t ns rr (I = 1.0 A, di/dt = 50 A/ s) 35 75 F (I = 0.5 A, i = 1.0 A, I = 0.25 A) 25 50 F R REC Maximum Forward Recovery Time t 25 50 ns fr (I = 1.0 A, di/dt = 100 A/ s, Recovery to 1.0 V) F Controlled Avalanche Energy (Maximum) W 5 mJ aval Typical Peak Reverse Recovery Current I 0.8 1.7 A RM (I = 1.0 A, di/dt = 50 A/ s) F 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2