Switch-mode Power Rectifier MURF1620CTG These stateoftheart devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features www.onsemi.com Ultrafast 35 Nanosecond Recovery Times ULTRAFAST RECTIFIER 150C Operating Junction Temperature Epoxy Meets UL 94 V0 0.125 in 16 AMPERES, 200 VOLTS High Temperature Glass Passivated Junction Low Leakage Specified 150C Case Temperature Current Derating Both Case and Ambient Temperatures Electrically Isolated. No Isolation Hardware Required. ESD Rating: Human Body Model = 3B (> 8 kV) Machine Model = C (> 400 V) ISOLATED TO220 This is a PbFree Package* FULLPAK 1 CASE 221D Mechanical Characteristics: 2 3 Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal 1 Leads are Readily Solderable 2 Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds 3 MARKING DIAGRAM AYWW A = Assembly Location U1620G Y = Year AKA WW = Work Week U1620 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping MURF1620CTG TO220 50 Units / Rail (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *For additional information on our PbFree strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2020 Rev. 12 MURF1620CT/DMURF1620CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) Per Diode, (Rated V ), T = 150C 8 R C Total Device 16 Peak Repetitive Forward Current I A FM (Rated V , Square Wave, 20 kHz), T = 150C 16 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 100 Operating Junction and Storage Temperature T , T 65 to +150 C J stg RMS Isolation Voltage V V iso1 (t = 0.3 second, R.H. 30%, T = 25C) (Note 1) 4500 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction toCase R 4.2 C/W JC Lead Temperature for Soldering Purposes: 1/8 from the Case for 5 seconds T 260 C L ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 8.0 A, T = 150C) 0.895 F C (i = 8.0 A, T = 25C) 0.975 F C Maximum Instantaneous Reverse Current (Note 2) i A R (Rated DC Voltage, T = 150C) 250 C (Rated DC Voltage, T = 25C) 5.0 C Maximum Reverse Recovery Time t ns rr (I = 1.0 A, di/dt = 50 A/ s) 35 F (I = 0.5 A, i = 1.0 A, I = 0.25 A) 25 F R REC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 1. Thermal Response JunctiontoAmbient, per Leg for MBRF20L60CT FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 2 R(t), TRANSIENT THERMAL RESISTANCE