N24RF04E RFID 4 Kb EEPROM Tag 2 ISO 15693 RF, I C Bus, Energy Harvesting Description The N24RF04E is a RFID/NFC tag with a 4 Kb EEPROM device, www.onsemi.com offering both contactless and contact interface. In addition to the ISO/IEC 15693 radio frequency identification (RFID) interface 2 protocol, the device features an I C interface to communicate with 2 amicrocontroller. The I C contact interface requires an external SOIC 8 TSSOP8, 4.4x3 power supply. CASE 751BD CASE 948AL The 4 Kb EEPROM array is internally organized as 128 x 32 bits in 2 PIN CONFIGURATION RF mode and as 512 x 8 bits when accessed from the I C interface. V V OUT CC Features AN RF WIP/BUSY 1 Contactless Transmission of Data AN SCL 2 ISO 15693 / ISO 180003 Mode1 Compliant V SDA SS Vicinity Range Communication (up to 150 cm) SOIC (W, X), TSSOP (Y) Air Interface Communication at 13.56 MHz (HF) To Tag: ASK Modulation with 1.65 Kbit/s or 26.48 Kbit/s Data PIN FUNCTION Rate Pin Name Function From Tag: Load Modulation Using Manchester Coding with SDA Serial Data 423 kHz and 484 kHz Subcarriers in Low (6.6 Kbit/s) or High SCL Serial Clock (26 Kbit/s) Data Rate Mode. Supports the 53 Kbit/s Data Rate AN1, AN2 Antenna Coil with Fast Commands V Power Supply CC Read & Write 32bit Block Mode V Ground SS Anticollision Support V Energy Harvesting Output OUT Security: 64bit Unique Identifier (UID) RF WIP/BUSY Internal Write or RF command in progress Multiple 32bit Passwords and Lock Feature for Each User Memory Sector MARKING DIAGRAMS 2 Supports Fast (400 kHz) and FastPlus (1 MHz) I C Protocol 1.8 V to 5.5 V Supply Voltage Range RF04EH 04EH 4Byte Page Write Buffer AYMZZZ AYMZZZ 2 I C Timeout 2 Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs (SCL and SDA) A = Assembly Site Code 128 Blocks x 32 Bits (4 Sectors of 32 Blocks Each): RF Mode Y = Production Year (Last Digit) M = Production Month Code 2 512 x 8 Bits I C Mode ZZZ = Last 3 Characters of Assembly Lot Number 2,000,000 Program/Erase Cycles ORDERING INFORMATION 200 Year Data Retention See detailed ordering and shipping information on page 22 of 40 C to +105 C Temperature Range this data sheet. Configurable Output Pin: RF Write in Progress or RF Busy *For additional information on our PbFree strategy Energy Harvesting Analog Output and soldering details, please download the ON Semiconductor Soldering and Mounting SOIC, TSSOP 8lead Packages Techniques Reference Manual, SOLDERRM/D. These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2018 Rev. 1 N24RF04E/DN24RF04E V CC AN1 SCL AN2 SDA N24RF04E V RF WIP/BUSY OUT V SS Figure 1. Functional Symbol Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit Storage Temperature 65 to +150 C Ambient Operating Temperature 40 to +105 C Voltage on SCL, SDA, RF WIP/BUSY and V pins with respect to Ground (Note 1) 0.5 to 6.5 V CC RF Input Voltage Peak to Peak Amplitude between AN1 and AN2, VSS pad floating 28 V AC Voltage on AN1 or AN2 with respect to GND 1 to 15 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. During transitions, the voltage undershoot on any pin should not exceed 1 V for more than 20 ns. Voltage overshoot on the SCL and SDA I C pins should not exceed the absolute maximum ratings, irrespective of VCC. Table 2. RELIABILITY CHARACTERISTICS EEPROM (Note 2) Symbol Parameter Test Conditions Max Unit NEND Endurance Write Cycles (Note 3) T 25 C, 1.8 V < V < 5.5 V 2,000,000 A CC T = 85 C, 1.8 V < V < 5.5 V 800,000 CC A T = 105 C, 1.8 V < V < 5.5 V 300,000 A CC TDR Data Retention T = 25 C 200 Year A 2. Determined through qualification/characterization. 3. A Write Cycle refers to writing a Byte or a Page. www.onsemi.com 2