NCP338 2A Ultra-Small Controlled Load Switch with Auto-discharge Path The NCP338 is very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device www.onsemi.com autonomy. Indeed, due to a current consumption optimization with PMOS MARKING structure, leakage currents are eliminated by isolating connected IC on DIAGRAM the battery when not used. Output discharge path is also embedded to eliminate residual AM WLCSP6 AYW voltages on the output rail. CASE 567FY Proposed in a wide input voltage range from 1.0 V to 3.6 V, in a small 0.8 x 1.2 mm WLCSP6, pitch 0.4 mm. AM = Specific Device Code A = Assembly Location Features Y = Year 1.0 V 3.6 V Operating Range W = Work Week 16 m P MOSFET at 3.6 V DC Current Up to 2 A PIN DIAGRAM Output Autodischarge 12 Active High EN Pin WLCSP6 0.8 x 1.2 mm A OUT IN ESD Ratings: 6 kV HBM, 250 V MM This is a PbFree Device B OUT IN Typical Applications Mobile Phones Tablets C GND EN Digital Cameras GPS Portable Devices ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. V+ LS NCP338 DCDC Converter A2 A1 Platform ICn IN OUT or B2 B1 IN OUT LDO C2 EN ENx EN 0 Figure 1. Typical Application Circuit Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2016 Rev. 3 NCP338/D C1 GNDNCP338 PIN FUNCTION DESCRIPTION Pin Number Pin Name Type Description IN A2, B2 POWER Loadswitch input voltage connect a 1 F or greater ceramic capacitor from IN to GND as close as possible to the IC. GND C1 POWER Ground connection. EN C2 INPUT Enable input, logic high turns on power switch. OUT A1, B1 OUTPUT Loadswitch output connect a 1 F ceramic capacitor from OUT to GND as close as pos- sible to the IC is recommended. BLOCK DIAGRAM IN: Pin A2, B2 OUT: Pin A1, B1 Gate driver and soft start control Control logic EN: Pin C2 EN block GND: Pin C1 Figure 2. Block Diagram MAXIMUM RATINGS Rating Symbol Value Unit IN, OUT, EN, Pins V V V 0.3 to + 4.0 V EN , IN , OUT From IN to OUT Pins: Input/Output V V 0 to + 4.0 V IN , OUT Maximum Junction Temperature T 40 to + 125 C J Storage Temperature Range T 40 to + 150 C STG Human Body Model (HBM) ESD Rating are (Note 1 and 2) ESD HBM 6000 V Machine Model (MM) ESD Rating are (Note 1 and 2) ESD MM 250 V Moisture Sensitivity (Note 3) MSL Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. According to JEDEC standard JESD22A108. 2. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) 2.0 kV per JEDEC standard: JESD22A114 for all pins. Machine Model (MM) 200 V per JEDEC standard: JESD22A115 for all pins. 3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: JSTD020. www.onsemi.com 2