NCP700MN330R2G ON Semiconductor

NCP700 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. NCP700 V in V out Bandgap Current Reference Limit Voltage C noise CE Active Discharge GND Figure 2. Simplified Block Diagram PIN FUNCTION DESCRIPTION DFN6 2x2.2 Pin No. Pin Name Description 1 CE Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect to GND. If this function is not in use, connect to V . Internal 5 M Pull Down resistor is connected in between CE and GND. 2, 5, EPAD GND Power Supply Ground (Pins are fused for the DFN package) 3 V Power Supply Input Voltage in 4 V Regulated Output Voltage out 6 C Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND) noise MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) V 0.3 V to 6 V V in Chip Enable Voltage V 0.3 V to V +0.3 V V CE in Noise Reduction Voltage V 0.3 V to V +0.3 V V Cnoise in Output Voltage V 0.3 V to V +0.3 V V out in Maximum Junction Temperature (Note 1) T 150 C J(max) Storage Temperature Range T 55 to 150 C STG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MILSTD883, Method 3015 Machine Model Method 200 V THERMAL CHARACTERISTICS Rating Symbol Value Unit Package Thermal Resistance, DFN6: (Note 1) R C/W JA JunctiontoLead (pin 2) 37 Junction toAmbient 120 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area