Dual MOSFET Gate Driver, High Performance NCP81080 The NCP81080 is a high performance dual MOSFET gate driver optimized to drive half bridge NChannel MOSFETs. The NCP81080 uses a bootstrap technique to ensure a proper drive of the highside www.onsemi.com power switch. A high floating top driver design can accommodate HB voltage as high as 180 V. The NCP81080 has an internal anticross conduction circuit with a 135 ns fixed internal deadtime to prevent MARKING current shootthrough. The NCP81080 is available in 2x2mm DFN DIAGRAMS and SOIC packages. 1 DFN8 CWM Features MN SUFFIX CASE 506AA Drives Two NChannel MOSFETs in HighSide and LowSide 1 Configuration CW = Specific Device Code Floating Top Driver Accommodates Boost Voltage up to 180 V M = Date Code = PbFree Device Switching Frequency up to 500 Khz (Note: Microdot may be in either location) Current ShootThrough Protection 8 135 ns Fixed internal DeadTime NCP81080 44 ns Rising and 30 ns Falling Propagation Delay Times SOIC8 8 ALYW 0.5 A peak Source Current with 0.8 A Peak Sink Current CASE 751 1 19 ns Rise/17 ns Fall Times with 1000pF Load 1 HighSide & LowSide UVLO Protection NCP81080 = Specific Device Code A = Assembly Location Applications L = Wafer Lot Telecom and Datacom Y = Year Isolated NonIsolated Power Supply Architectures W = Work Week = PbFree Package ClassD Audio Amplifiers (Note: Microdot may be in either location) Two Switch and Active Clamp Forward Converters Motor Drives ORDERING INFORMATION Device Package Shipping VDD 12 V HB VIN NCP81080MNTBG DFN8 3000 / Tape & HI HO (PbFree) Reel PWM NCP81080 VOUT NCP81080DR2G SOIC8 2500 / Tape & CONTROLLER HS LI (PbFree) Reel LO For information on tape and reel specifications, including part orientation and tape sizes, please VSS refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Figure 1. Typical Application Circuit Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2020 Rev. 2 NCP81080/DNCP81080 Table 1. PIN DESCRIPTION TABLE VDD 1 8 HB Pin No. Symbol Description Positive supply for the low 1 VDD side driver HI 2 7 HO 2 HI HighSide Input EPAD 3 LI LowSide Input LI 3 6 HS 4 VSS Negative Supply Return 5 LO LowSide Output VSS 4 5 LO 6 HS HighSide Source (Top View) 7 HO HighSide Output 8 HB HighSide Bootstrap 9 EPAD Connect EPAD to VSS Table 2. MAXIMUM RATINGS Parameter Value Unit VDD 0.3 to 24 V V V 0.3 to 200 V HB SS V V DC 0.3 to V + 0.3 V HO HS HB Repetitive Pulse < 100 ns 2 to V + 0.3, (V V <20) HB HB HS V V DC 20 to 200 VDD V HS SS V V DC 0.3 to VDD + 0.3 V LO SS Repetitive pulse < 100 ns 2 to VDD + 0.3 V , V 10 to 24 V HI LI V V 0.3 to 24 V HB HS I AC (Peak current) 8 A Diode Operating virtual Junction Temp Range, T 40 to 170 C J Storage Temperature, T 65 to 150 C STG Lead Temperature (Soldering, 10 sec) +300 C HBM 800 V CDM 2000 V Table 3. RECOMMENDED OPERATING CONDITIONS Parameter Min Nom Max Unit V Supply Voltage Range 5.5 12 20 V DD V Voltage on HS (DC) 10 180 HS V Voltage on HB V + 5.5 V + 20 HB HS HS Voltage Slew Rate on HS 30 V / ns T Operating Junction Temperature Range 40 +140 C J www.onsemi.com 2