NCR169DG ON Semiconductor

NCR169D General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor NCR169D THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R 75 C/W JC Junction to Ambient R 200 JA Lead Solder Temperature ( 1/16 from case, 10 secs max) T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or I , I DRM RRM Reverse Blocking Current (Note 1.) T = 25C 10 A C (V = Rated V and V R = 1.0 k)T = 110C 0.1 mA D DRM RRM GK C ON CHARACTERISTICS (*) Peak Forward OnState Voltage V 1.7 Volts TM (I = 1.0 Amp Peak T = 25C) TM A Gate Trigger Current (Continuous dc) (Note 2.) T = 25C I 40 200 A C GT (V = 12 V, R = 100 Ohms) AK L Holding Current (Note 2.) T = 25C I 0.5 5.0 mA C H (V = 12 V, I = 0.5 mA) T = 40C 10 AK GT C Latch Current T = 25C I 0.6 10 mA C L (V = 12 V, I = 0.5 mA, R = 1.0 k) T = 40C 15 AK GT GK C Gate Trigger Voltage (Continuous dc) (Note 2.) T = 25C V 0.62 0.8 Volts C GT (V = 12 V, R = 100 Ohms, I = 10 mA) T = 40C 1.2 AK L GT C DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dV/dt 20 35 V/s (V = Rated V , Exponential Waveform, R = 1000 Ohms, D DRM GK T = 110C) J Critical Rate of Rise of OnState Current di/dt 50 A/s (I = 20 A Pw = 10 sec diG/dt = 1.0 A/sec, Igt = 20 mA) PK *Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%. 1. R = 1000 Ohms included in measurement. GK 2. Does not include R in measurement. GK Voltage Current Characteristic of SCR + Current Anode + Symbol Parameter V TM V Peak Repetitive Off State Forward Voltage DRM on state I Peak Forward Blocking Current DRM I H I at V RRM RRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak on State Voltage TM + Voltage I Holding Current H I at V Reverse Blocking Region DRM DRM (off state) Forward Blocking Region (off state) Reverse Avalanche Region Anode