Product Information

NCV1729SN35T1G

NCV1729SN35T1G electronic component of ON Semiconductor

Datasheet
Inverters SW CAP VOLTAGE INVER

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

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NCV1729SN35T1G
ON Semiconductor

3000 : USD 0.3561
6000 : USD 0.3345
9000 : USD 0.3283
24000 : USD 0.324
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000

Stock Image

NCV1729SN35T1G
ON Semiconductor

3000 : USD 0.417
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

NCV1729SN35T1G
ON Semiconductor

1 : USD 0.8366
10 : USD 0.688
100 : USD 0.4485
250 : USD 0.4212
500 : USD 0.364
1000 : USD 0.3003
3000 : USD 0.265
6000 : USD 0.2525
9000 : USD 0.2437
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
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Qualification
Packaging
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Product Type
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Cnhts
Hts Code
Mxhts
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NCP1729 Switched Capacitor Voltage Inverter The NCP1729 is a CMOS charge pump voltage inverter that is designed for operation over an input voltage range of 1.5 V to 5.5 V with an output current capability in excess of 50 mA. The operating www.onsemi.com current consumption is only 122 A, and a power saving shutdown input is provided to further reduce the current to a mere 0.4 A. The device contains a 35 kHz oscillator that drives four low resistance MARKING MOSFET switches, yielding a low output resistance of 26 and a DIAGRAM voltage conversion efficiency of 99%. This device requires only two TSOP6 6 external 3.3 F capacitors for a complete inverter making it an ideal (SOT236) 1 solution for numerous battery powered and board level applications. XXXAYW SN SUFFIX The NCP1729 is available in the space saving TSOP6 package. CASE 318G 1 Features XXX = Device Code Operating Voltage Range of 1.5 V to 5.5 V A = Assembly Location Output Current Capability in Excess of 50 mA Y = Year W = Work Week Low Current Consumption of 122 A = PbFree Package Power Saving Shutdown Input for a Reduced Current of 0.4 A (Note: Microdot may be in either location) Operation at 35 kHz Low Output Resistance of 26 PIN CONNECTIONS Space Saving TSOP6 Package NCV Prefix for Automotive and Other Applications Requiring V 1 6 C+ out Unique Site and Control Change Requirements AECQ100 Qualified and PPAP Capable 2 5 V SHDN in These Devices are PbFree and are RoHS Compliant C 3 4 GND Typical Applications LCD Panel Bias (Top View) Cellular Telephones Pagers ORDERING INFORMATION Personal Digital Assistants See detailed ordering, marking and shipping information in the Electronic Games package dimensions section on page 22 of this data sheet. Digital Cameras Camcorders Hand Held Instruments V out 6 1 V 2 5 in 3 4 This device contains 77 active transistors. Figure 1. Typical Application Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2016 Rev. 6 NCP1729/DNCP1729 MAXIMUM RATINGS* Rating Symbol Value Unit Input Voltage Range (V to GND) V 0.3 to 6.0 V in in Output Voltage Range (V to GND) V 6.0 to 0.3 V out out Output Current I 100 mA out Output Short Circuit Duration (V to GND) t Indefinite sec out SC Operating Junction Temperature T 150 C J Power Dissipation and Thermal Characteristics Thermal Resistance, JunctiontoAir R 256 C/W JA Maximum Power Dissipation T = 70C P 313 mW A D Storage Temperature T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *ESD Ratings ESD Machine Model Protection up to 200 V, Class B ESD Human Body Model Protection up to 2000 V, Class 2 ELECTRICAL CHARACTERISTICS (V = 5.0 V, C = 3.3 F, C = 3.3 F, T = 40C to 85C, typical values shown are for in 1 2 A T = 25C unless otherwise noted. See Figure 14 for Test Setup.) A Characteristic Symbol Min Typ Max Unit Operating Supply Voltage Range (SHDN = V , R = 10 k) V 1.5 5.5 V in L in Supply Current Device Operating (SHDN = 5.0 V, R = ) I A L in T = 25C 122 200 A T = 85C 128 200 A Supply Current Device Shutdown (SHDN = 0 V) I A SHDN T = 25C 0.4 A T = 85C 1.7 A Oscillator Frequency f kHz OSC T = 25C 24.5 33.5 45.6 A T = 40C to 85C 19 54 A Output Resistance (I = 25 mA, Note 1) R 26 50 out out Voltage Conversion Efficiency (R = ) V 99 99.9 % L EFF Power Conversion Efficiency (R = 1.0 k) P 96 % L EFF Shutdown Input Threshold Voltage (V = 1.5 V to 5.5 V) V V in th(SHDN) High State, Device Operating 0.6 V in Low State, Device Shutdown 0.5 V in Shutdown Input Bias Current pA High State, Device Operating, SHDN = 5.0 V I IH T = 25C 5.0 A T = 85C 100 A Low State, Device Shutdown, SHDN = 0 V I IL T = 25C 5.0 A T = 85C 100 A WakeUp Time from Shutdown (R = 1.0 k) t 1.0 ms L WKUP Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Capacitors C and C contribution is approximately 20% of the total output resistance. 1 2 www.onsemi.com 2

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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