M NL17SG07E Buffer with Open Drain Output The NL17SG07E MiniGate is an advanced highspeed CMOS Buffer with Open Drain Output in ultrasmall footprint. The NL17SG07E input and output structures provide protection www.onsemi.com when voltages up to 3.6 V are applied regardless of the supply voltage. Features Wide Operating V Range: 0.9 V to 3.6 V CC MARKING DIAGRAM High Speed: t = 2.5 ns (Typ) at V = 3.0 V, C = 15 pF PD CC L Low Power Dissipation: I = 0.5 A (Max) at T = 25C CC A SC88A 3.6 V Overvoltage Tolerant (OVT) Input and Output Pins A6 M DF SUFFIX UltraSmall Packages CASE 419A These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant M = Date Code* = PbFree Package (Note: Microdot may be in either location) NC 1 5 V CC *Date Code orientation and/or position may vary depending upon manufacturing location. A 2 PIN ASSIGNMENT 4 Y 3 GND PIN NAME 1 NC Figure 1. SC88A 2 A (Top View) 3 GND 4 Y 5 V 1 CC A Y Figure 2. Logic Symbol FUNCTION TABLE Input A Output Y L L H Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2018 Rev. 2 NL17SG07E/DNL17SG07E MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +4.6 V CC V DC Input Voltage 0.5 to +4.6 V IN V DC Output Voltage Active Mode, LOW State 0.5 to V + 0.5 V OUT CC TriState Mode, Output at HiZ State 0.5 to +4.6 PowerDown Mode (V = 0 V) CC 0.5 to +4.6 I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 20 mA OUT I DC Supply Current per Supply Pin 20 mA CC I DC Ground Current per Ground Pin 20 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) >2000 V ESD I Latchup Performance above V and below GND at 125C (Note 3) 75 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V Positive DC Supply Voltage 0.9 3.6 V CC V Digital Input Voltage 0.0 3.6 V IN V Output Voltage Output at Low State 0.0 V V OUT CC TriState Mode, Output at HiZ State 0.0 3.6 PowerDown Mode (V = 0 V) 0.0 3.6 CC T Operating Temperature Range 55 +125 C A t / V Input Transition Rise or Fail Rate V = 3.3 V 0.3 V 0 10 ns/V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2