NL17SH32 Single 2-Input OR Gate The NL17SH32 is an advanced high speed CMOS 2input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The NL17SH32 input structure provides protection when voltages NL17SH32 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to V +0.5 V OUT CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 20 mA OK I DC Output Sink Current 25 mA OUT I DC Supply Current per Supply Pin 50 mA CC T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J P Power Dissipation in Still Air 50 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R I Latchup Performance Above V and Below GND at 125C (Note 1) 100 mA LATCHUP CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0.0 5.5 V IN V DC Output Voltage 0.0 V V OUT CC T Operating Temperature Range 55 +125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC V = 5.0 V 0.5 V 0 20 CC Device Junction Temperature versus FAILURE RATE OF PLASTIC = CERAMIC Time to 0.1% Bond Failures UNTIL INTERMETALLICS OCCUR Junction Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 1 100 178,700 20.4 110 79,600 9.4 1 10 100 1000 120 37,000 4.2 TIME, YEARS 130 17,800 2.0 140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature