NL17SHT08P5T5G ON Semiconductor

NL17SHT08 2-Input AND Gate / CMOS Logic Level Shifter The NL17SHT08 is an advanced high speed CMOS 2input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while NL17SHT08 MAXIMUM RATINGS Symbol Characteristics Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage V = 0 0.5 to 7.0 V OUT CC High or Low State 0.5 to V + 0.5 CC I Input Diode Current 20 mA IK I Output Diode Current V < GND V > V 20 mA OK OUT OUT CC I DC Output Current 25 mA OUT I DC Supply Current, V and GND 50 mA CC CC P Power dissipation in still air 50 mW D T Lead temperature, 1 mm from case for 10 s 260 C L T Junction temperature under bias +150 C J T Storage temperature 65 to +150 C stg I Latchup Performance Above V and Below GND at 125C (Note 1) 100 mA Latchup CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V DC Supply Voltage 3.0 5.5 V CC V DC Input Voltage 0.0 5.5 V IN V DC Output Voltage V = 0 0.0 5.5 V OUT CC High or Low State 0.0 V CC T Operating Temperature Range 55 +125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC V = 5.0 V 0.5 V 0 20 CC Device Junction Temperature versus Time to 0.1% Bond Failures FAILURE RATE OF PLASTIC = CERAMIC Junction UNTIL INTERMETALLICS OCCUR Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 1 110 79,600 9.4 120 37,000 4.2 1 10 100 1000 130 17,800 2.0 TIME, YEARS 140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature