NLAS4599 Low Voltage Single Supply SPDT Analog Switch The NLAS4599 is an advanced high speed CMOS single pole double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON NLAS4599 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Positive DC Supply Voltage 0.5 to +7.0 V CC V Analog Input Voltage (V or V ) 0.5 V V 0.5 V IS NO COM IS CC V Digital Select Input Voltage 0.5 V + 7.0 V IN I I DC Current, Into or Out of Any Pin 50 mA IK P Power Dissipation in Still Air SC 88 200 mW D TSOP6 200 T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1mm from Case for 10 seconds 260 C L T Junction Temperature Under Bias 150 C J V ESD Withstand Voltage Human Body Model (Note 1) 2000 V ESD Machine Model (Note 2) 200 Charged Device Model (Note 3) N/A I LatchUp Performance Above V and Below GND at 125C (Note 4) 300 mA LATCHUP CC Thermal Resistance SC 88 333 C/W JA TSOP6 333 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22A114 A 2. Tested to EIA/JESD22A115 A 3. Tested to JESD22C101A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V Digital Select Input Voltage GND 5.5 V IN V Analog Input Voltage (NC, NO, COM) GND V V IS CC T Operating Temperature Range 55 +125 C A t , t Input Rise or Fall Time, ns/V r f SELECT V = 3.3 V + 0.3 V 0 100 CC V = 5.0 V + 0.5 V 0 20 CC DEVICE JUNCTION TEMPERATURE VERSUS TIME FAILURE RATE OF PLASTIC = CERAMIC TO 0.1% BOND FAILURES UNTIL INTERMETALLICS OCCUR Junction Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 1 100 178,700 20.4 110 79,600 9.4 1 10 100 1000 TIME, YEARS 120 37,000 4.2 Figure 3. Failure Rate vs. Time Junction Temperature 130 17,800 2.0 140 8,900 1.0