NLSF308MNR2G ON Semiconductor

NLSF308 Quad 2Input AND Gate The NLSF308 is an advanced high speed CMOS 2input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer B4 A3 V Y3 CC A1 GND B1 Y2 NLSF308 16 15 14 13 Y1 A4 12 1 15 A1 1 Y1 16 NLSF308 NC NC 2 11 B1 MN Package 3 A2 5 A2 Y4 10 3 Y2 4 (Top View) B2 Y = AB 8 B2 9 B3 A3 4 7 Y3 9 B3 12 56 7 8 A4 10 Y4 13 B4 Figure 1. LOGIC DIAGRAM Figure 2. PIN ASSIGNMENT (QFN16) MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage V 0.5 to + 7.0 V CC DC Input Voltage V 0.5 to + 7.0 V in DC Output Voltage V 0.5 to V + 0.5 V out CC Input Diode Current I 20 mA IK Output Diode Current I 20 mA OK DC Output Current, per Pin I 25 mA out DC Supply Current, V and GND Pins I 50 mA CC CC Power Dissipation in Still Air P 450 mW D Storage Temperature T 65 to + 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit DC Supply Voltage V 2.0 5.5 V CC DC Input Voltage V 0 5.5 V in DC Output Voltage V 0 V V out CC Operating Temperature T 40 + 85 C A Input Rise and Fall Time V = 3.3 V 0.3 V t , t 0 100 ns/V CC r f V = 5.0 V 0.5 V 0 20 CC