NLU1GT14AMUTCG ON Semiconductor

NLU1GT14 Single Schmitt-Trigger Inverter, TTL Level LSTTLCompatible Inputs The NLU1GT14 MiniGate is an advanced highspeed CMOS www.onsemi.com Schmitttrigger inverter in ultrasmall footprint. The device input is compatible with TTLtype input thresholds and MARKING the output has a full 5 V CMOS level output swing. DIAGRAMS The NLU1GT14 input and output structures provide protection when voltages up to 7 V are applied, regardless of the supply voltage. UDFN6 MM MU SUFFIX The NLU1GT14 can be used to enhance noise immunity or to CASE 517AA square up slowly changing waveforms. 1 Features UDFN6 T M High Speed: t = 4.5 ns (Typ) V = 5.0 V 1.0 x 1.0 PD CC CASE 517BX Low Power Dissipation: I = 1 A (Max) at T = 25C CC A 1 TTLCompatible Input: V = 0.8 V V = 2.0 V IL IH CMOSCompatible Output: UDFN6 Q M 1.45 x 1.0 V > 0.8 V V < 0.1 V Load OH CC OL CC CASE 517AQ Power Down Protection Provided on inputs 1 Balanced Propagation Delays Overvoltage Tolerant (OVT) Input and Output Pins M = Device Marking UltraSmall Packages M = Date Code These are PbFree Devices ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. NC 1 6 V CC IN A 2 5 NC GND 3 4 OUT Y Figure 1. Pinout (Top View) 1 IN A OUT Y PIN ASSIGNMENT Figure 2. Logic Symbol 1 NC 2 IN A FUNCTION TABLE 3 GND AY 4 OUT Y 5NC L H H L 6V CC Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 5 NLU1GT14/DNLU1GT14 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 12.5 mA O I DC Supply Current Per Supply Pin 25 mA CC I DC Ground Current per Ground Pin 25 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) > 2000 V ESD Machine Model (Note 3) > 150 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125C (Note 5) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD22A114A. 3. Tested to EIA / JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 1.65 5.5 V CC V Digital Input Voltage 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 3.3 V 0.3 V 0 No Limit ns/V CC V = 5.0 V 0.5 V 0 No Limit CC www.onsemi.com 2