NLU3G14MUTAG ON Semiconductor

NLU3G14 Triple Schmitt-Trigger Inverter The NLU3G14 MiniGate is an advanced highspeed CMOS triple Schmitttrigger inverter in ultrasmall footprint. The NLU3G14 input and output structures provide protection when www.onsemi.com voltages up to 7.0 V are applied, regardless of the supply voltage. The NLU3G14 can be used to enhance noise immunity or to square MARKING up slowly changing waveforms. DIAGRAMS Features 8 High Speed: t = 4.0 ns (Typ) V = 5.0 V PD CC UXM UDFN8 CASE 517AJ Low Power Dissipation: I = 1 A (Max) at T = 25C CC A 1 Power Down Protection Provided on inputs Balanced Propagation Delays UDFN8 X M 1.45 x 1.0 Overvoltage Tolerant (OVT) Input and Output Pins CASE 517BZ 1 UltraSmall Packages These are PbFree Devices UDFN8 1.6 x 1.0 X M CASE 517BY 1 IN A1 1 8 V CC UDFN8 1.95 x 1.0 X M 2 7 CASE 517CA OUT Y3 OUT Y1 1 UX, A or LA = Specific Device Code 3 6 IN A2 IN A3 M = Date Code = PbFree Package 4 5 GND OUT Y2 ORDERING INFORMATION See detailed ordering and shipping information in the package Figure 1. Pinout (Top View) dimensions section on page 4 of this data sheet. 1 IN A1 OUT Y2 1 IN A2 OUT Y2 1 IN A3 OUT Y3 PIN ASSIGNMENT Figure 2. Logic Symbol 1 IN A1 2 OUT Y3 3IN A2 4 GND FUNCTION TABLE 5 OUT Y2 AY 6 IN A3 L H 7 OUT Y1 H L 8V CC Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 4 NLU3G14/DNLU3G14 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 12.5 mA O I DC Supply Current Per Supply Pin 25 mA CC I DC Ground Current per Ground Pin 25 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) > 2000 V ESD Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125C (Note 5) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD22A114A. 3. Tested to EIA / JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 1.65 5.5 V CC V Digital Input Voltage 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 3.3 V 0.3 V 0 No Limit ns/V CC V = 5.0 V 0.5 V 0 No Limit CC www.onsemi.com 2