NLV74ACT00DR2G ON Semiconductor

MC74AC00, MC74ACT00 Quad 2-Input NAND Gate HighPerformance SiliconGate CMOS Features www.onsemi.com Output Drive Capability: 24 mA Operating Voltage Range: 2 to 6 V AC00 4.5 to 5.5 ACT00 MARKING Low Input Current: 1.0 A DIAGRAMS High Noise Immunity Characteristic of CMOS Devices 14 In Compliance With the JEDEC Standard No. 7A Requirements Chip Complexity: 32 FETs SOIC14 xxx00G D SUFFIX These are PbFree Devices AWLYWW CASE 751A 14 1 1 A1 1 3 Y1 2 B1 14 4 A2 6 xxx Y2 5 TSSOP14 00 B2 DT SUFFIX ALYW Y = AB 1 9 CASE 948G A3 8 14 Y3 10 B3 1 12 A4 11 xxx = AC or ACT Y4 13 A = Assembly Location B4 WL or L = Wafer Lot PIN 14 = V Y = Year CC PIN 7 = GND WW or W = Work Week G or = PbFree Package Figure 1. Logic Diagram (Note: Microdot may be in either location) V B4 A4 Y4 B3 A3 Y3 CC 14 13 12 11 10 9 8 FUNCTION TABLE Inputs Output AB Y L L H L H H H L H 1 2 3 4567 H H L A1 B1 Y1 A2 B2 Y2 GND Figure 2. Pinout: 14Lead Packages (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 10 MC74AC00/DMC74AC00, MC74ACT00 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to 7.0 V CC V DC Input Voltage 0.5 V V 0.5 V I I CC V DC Output Voltage (Note 1) 0.5 V V 0.5 V O O CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 50 mA OK I DC Output Sink/Source Current 50 mA O I DC Supply Current per Output Pin 50 mA CC I DC Ground Current per Output Pin 50 mA GND T Storage Temperature Range 65 to 150 C STG T Lead temperature, 1 mm from Case for 10 Seconds 260 C L T Junction temperature under Bias 150 C J Thermal Resistance (Note 2) SOIC 125 C/W JA TSSOP 170 P Power Dissipation in Still Air at 85C SOIC 125 mW D TSSOP 170 MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 30% 35% UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 3) > 2000 V ESD Machine Model (Note 4) > 200 Charged Device Model (Note 5) > 1000 I LatchUp Performance Above V and Below GND at 85C (Note 6) 100 mA LatchUp CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. I absolute maximum rating must be observed. O 2. The package thermal impedance is calculated in accordance with JESD517. 3. Tested to EIA/JESD22A114A. 4. Tested to EIA/JESD22A115A. 5. Tested to JESD22C101A. 6. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Typ Max Unit V Supply Voltage MC74AC00 2.0 5.0 6.0 V CC MC74ACT00 4.5 5.0 5.5 V , V DC Input Voltage, Output Voltage (Ref. to GND) 0 V V in out CC t , t Input Rise and Fall Time (Note 7) V 3.0 V 150 ns/V r f CC MC74AC00 V 4.5 V 40 CC V 5.5 V 25 CC t , t Input Rise and Fall Time (Note 8) V 4.5 V 10 ns/V r f CC MC74ACT00 V 5.5 V 8.0 CC T Junction Temperature 150 C J T Operating Ambient Temperature Range 55 25 125 C A I Output Current High 24 mA OH I Output Current Low 24 mA OL Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 7. V from 30% to 70% V . in CC 8. V from 0.8 V to 2.0 V. in www.onsemi.com 2