NLX2G08DMUTCG ON Semiconductor

NLX2G08 Dual 2-Input AND Gate The NLX2G08 is an advanced high-speed dual 2-input CMOS AND gate in ultra-small footprint. The NLX2G08 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. Features www.onsemi.com High Speed: t 2.5 ns (typical) at V = 5.0 V PD CC Designed for 1.65 V to 5.5 V V Operation CC MARKING Low Power Dissipation: I = 1 A (Max) at T = 25C CC A DIAGRAMS 24 mA Balanced Output Sink and Source Capability 1 UQFN8 Balanced Propagation Delays AD M MU SUFFIX Overvoltage Tolerant (OVT) Input Pins 8 CASE 523AN 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant UDFN8 X M 1.45 x 1.0 CASE 517BZ 1 A1 1 8 V CC A1 B1 Y2 76 5 UDFN8 1.6 x 1.0 X M CASE 517BY 1 B1 2 7 Y1 V CC GND 8 4 UDFN8 1.95 x 1.0 X M CASE 517CA Y2 3 6 B2 1 XX = Specific Device Code 1 23 M = Date Code GND45 A2 Y1 B2 A2 = PbFree Package (Note: Microdot may be in either location) Figure 1. Pinouts IEEE/IEC A1 ORDERING INFORMATION & Y1 See detailed ordering and shipping information in the package B1 dimensions section on page 4 of this data sheet. A2 Y2 B2 PIN ASSIGNMENT Figure 2. Logic Symbol Pin Function Function (UQFN8) (ULLGA/ FUNCTION TABLE UDFN) Y = AB 1 Y1 A1 Inputs Output 2 B2 B1 A B Y 3 A2 Y2 L L L 4 GND GND L H L 5 Y2 A2 H L L 6 B1 B2 H H H 7 A1 Y1 H = HIGH Logic Level 8 V V CC CC L = LOW Logic Level Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2018 Rev. 9 NLX2G08/DNLX2G08 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to V + 0.5 V OUT CC I DC Input Diode Current V < GND 50 mA IK IN I DC Output Diode Current V < GND 50 mA OK OUT I DC Output Source/Sink Current 50 mA O I DC Supply Current per Supply Pin 100 mA CC I DC Ground Current per Ground Pin 100 mA GND T Storage Temperature Range 65 to 150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J Thermal Resistance (Note 1) 250 C/W JA P Power Dissipation in Still Air at 85C 250 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) >2000 V ESD Machine Model (Note 3) >200 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125C (Note 5) 500 mA Latchup CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Power DC Supply Voltage Operating 1.65 5.5 V CC Data Retention Only 1.5 5.5 V Digital Input Voltage (Note 6) 0 5.5 V IN V Output Voltage 0 V V OUT CC T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 1.8 V 0.15 V 0 20 ns/V CC V = 2.5 V 0.2 V 0 20 CC V = 3.3 V 0.3 V 0 10 CC V = 5.0 V 0.5 V 0 5 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 6. Unused inputs may not be left open. All inputs must be tied to a high or lowlogic input voltage level. www.onsemi.com 2