X-On Electronics has gained recognition as a prominent supplier of NMLU1210TWG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NMLU1210TWG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NMLU1210TWG ON Semiconductor

NMLU1210TWG electronic component of ON Semiconductor
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Part No.NMLU1210TWG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Dual N-Channel Full BridgeRectifierUDFN8
Datasheet: NMLU1210TWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 1
3000 : USD 0.7552
6000 : USD 0.7174
15000 : USD 0.6904
N/A

Obsolete
0
MOQ : 497
Multiples : 497
497 : USD 0.7258
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.8059
10 : USD 1.3161
100 : USD 0.9942
500 : USD 0.8668
1000 : USD 0.728
3000 : USD 0.7042
N/A

Obsolete
0
MOQ : 209
Multiples : 1
209 : USD 0.3784
250 : USD 0.3525
500 : USD 0.3455
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NMLU1210TWG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NMLU1210TWG and other electronic components in the MOSFETs category and beyond.

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L1 2 L1 1 NMLU1210 Full Bridge Rectifier Dual 20 V NChannel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm Cool Package Features FullBridge Rectifier Block NMLU1210 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction toAmbient Steady State (Note 3) R 82.5 C/W JA JunctiontoAmbient t 5 s (Note 3) R 42.5 JA JunctiontoAmbient Steady State min Pad (Note 4) R 209 JA 3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surfacemounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. BRIDGE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit ON CHARACTERISTICS Rectifying Forward Voltage (Note 5) V Input voltage V = 5 V 0.45 .56 V fd2 LL The output current of Rectifier I = 2 A out Rectifier leakage current I Input voltage V = 16 V 31 1000 uA leak LL No Load on the Rectifier output Rectifier Reverse leakage current I Input voltage V = 0 V 21 1000 uA rleak LL The output voltage of the Rectifier V = 5 V out 5. Pulse Test: pulse width 300 s, duty cycle 2% MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage V 1.2 2.2 V V = VDS, I = 250 A GS(TH) GS D Negative Threshold Temperature V / GS(TH) 4 mV/C Coefficient T J V = 10 V, I = 3.2 A 17 26 GS D DraintoSource On Resistance R m DS(on) (Note 6) V = 4.5 V, I = 3.2 A 23 32 GS D Forward Transconductance g VDS = 10 V, I = 2.0 A 3.5 S FS D DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 6) V V = 0 V, I = 2.0 A T = 25C 0.79 V SD GS S J T = 125C 0.65 J 6. Pulse Test: pulse width 300 s, duty cycle 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit Maximum Instantaneous Forward V V I = 1.0 A 0.36 F F Voltage (Note 7) I = 2.0 A 0.41 F Maximum Instantaneous Reverse I V = 20 V 0.04 mA R R Current 7. Pulse Test: pulse width 300 s, duty cycle 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 100C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit Maximum Instantaneous Forward I = 1.0 A 0.29 V F Voltage (Note 8) V F I = 2.0 A 0.36 F Maximum Instantaneous Reverse I V = 20 V 4 mA R R Current 8. Pulse Test: pulse width 300 s, duty cycle 2% 9. For detailed MOSFET and Diode parameters, please refer to the ON Semiconductor datasheets of NTTFS4930N and MBR230LSFT1G. The test on each individual die is limited to the system package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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