NMLU1210TWG ON Semiconductor

L1 2 L1 1 NMLU1210 Full Bridge Rectifier Dual 20 V NChannel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm Cool Package Features FullBridge Rectifier Block NMLU1210 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction toAmbient Steady State (Note 3) R 82.5 C/W JA JunctiontoAmbient t 5 s (Note 3) R 42.5 JA JunctiontoAmbient Steady State min Pad (Note 4) R 209 JA 3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surfacemounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. BRIDGE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit ON CHARACTERISTICS Rectifying Forward Voltage (Note 5) V Input voltage V = 5 V 0.45 .56 V fd2 LL The output current of Rectifier I = 2 A out Rectifier leakage current I Input voltage V = 16 V 31 1000 uA leak LL No Load on the Rectifier output Rectifier Reverse leakage current I Input voltage V = 0 V 21 1000 uA rleak LL The output voltage of the Rectifier V = 5 V out 5. Pulse Test: pulse width 300 s, duty cycle 2% MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage V 1.2 2.2 V V = VDS, I = 250 A GS(TH) GS D Negative Threshold Temperature V / GS(TH) 4 mV/C Coefficient T J V = 10 V, I = 3.2 A 17 26 GS D DraintoSource On Resistance R m DS(on) (Note 6) V = 4.5 V, I = 3.2 A 23 32 GS D Forward Transconductance g VDS = 10 V, I = 2.0 A 3.5 S FS D DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 6) V V = 0 V, I = 2.0 A T = 25C 0.79 V SD GS S J T = 125C 0.65 J 6. Pulse Test: pulse width 300 s, duty cycle 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit Maximum Instantaneous Forward V V I = 1.0 A 0.36 F F Voltage (Note 7) I = 2.0 A 0.41 F Maximum Instantaneous Reverse I V = 20 V 0.04 mA R R Current 7. Pulse Test: pulse width 300 s, duty cycle 2% SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 100C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit Maximum Instantaneous Forward I = 1.0 A 0.29 V F Voltage (Note 8) V F I = 2.0 A 0.36 F Maximum Instantaneous Reverse I V = 20 V 4 mA R R Current 8. Pulse Test: pulse width 300 s, duty cycle 2% 9. For detailed MOSFET and Diode parameters, please refer to the ON Semiconductor datasheets of NTTFS4930N and MBR230LSFT1G. The test on each individual die is limited to the system package.