NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with www.onsemi.com a monolithic bias network consisting of two resistors a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias (5) (4) network. The BRT eliminates these individual components by integrating them into a single device. In the NSB1706DMW5T1G, two BRT devices are housed in the SC88A package which is ideal for low power surface mount applications where board space is at a Q1Q1 Q2 premium. Features R2 R2 Simplifies Circuit Design Reduces Board Space R1 R1 Reduces Component Count (1) (2) (3) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted, common for Q and Q ) A 1 2 Rating Symbol Value Unit 1 Collector-Base Voltage V 50 Vdc SC88A CBO CASE 419A Collector-Emitter Voltage V 50 Vdc CEO STYLE 1 Collector Current I 100 mAdc C THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit (One Junction Heated) Total Device Dissipation P 187 (Note 1) mW D U6 M T = 25C 256 (Note 2) A Derate above 25C 1.5 (Note 1) mW/C 1 2.0 (Note 2) Thermal Resistance, Junction-to-Ambient R 670 (Note 1) C/W U6 = Device Marking JA 490 (Note 2) M = Date Code = PbFree Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) (Both Junctions Heated) Total Device Dissipation P 250 (Note 1) mW D T = 25C 385 (Note 2) ORDERING INFORMATION A Derate above 25C 2.0 (Note 1) mW/C 3.0 (Note 2) Device Package Shipping Thermal Resistance, Junction-to-Ambient R 493 (Note 1) C/W JA NSB1706DMW5T1G SC88A 3000 / 325 (Note 2) (PbFree) Tape & Reel Thermal Resistance, Junction-to-Lead R 188 (Note 1) C/W JL NSVB1706DMW5T1G SC88A 3000 / 208 (Note 2) (PbFree) Tape & Reel Junction and Storage Temperature T , T 55 to +150 C J stg For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 inch Pad. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2016 Rev. 6 NSB1706DMW5T1/DNSB1706DMW5T1G, NSVB1706DMW5T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, common for Q and Q ) A 1 2 Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current I 100 nAdc CBO (V = 50 V, I = 0) CB E Collector-Emitter Cutoff Current I 500 nAdc CEO (V = 50 V, I = 0) CE B Emitter-Base Cutoff Current I 0.18 mAdc EBO (V = 6.0 V, I = 0) EB C Collector-Base Breakdown Voltage V 50 Vdc (BR)CBO (I = 10 A, I = 0) C E Collector-Emitter Breakdown Voltage (Note 3) V 50 Vdc (BR)CEO (I = 2.0 mA, I = 0) C B ON CHARACTERISTICS (Note 3) DC Current Gain h 80 200 FE (V = 10 V, I = 5.0 mA) CE C Collector-Emitter Saturation Voltage V 0.25 Vdc CE(sat) (I = 10 mA, I = 1 mA) C B Input Voltage (off) V Vdc i(off) (V = 5.0 V, I = 100 A) 0.6 0.5 CE C Input Voltage (on) V Vdc i(on) (V = 0.3 V, I = 5 mA) 1.3 0.9 CE C Output Voltage (on) V Vdc OL (V = 5.0 V, V = 2.5 V, R = 1.0 k ) 0.2 CC B L Output Voltage (off) V 4.9 Vdc OH (V = 5.0 V, V = 0.25 V, R = 1.0 k ) CC B L Input Resistor R1 3.3 4.7 6.1 k Resistor Ratio R1/R2 0.055 0.1 0.185 NOTE: New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. 300 250 200 150 100 50 R = 833C/W JA 0 50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D