X-On Electronics has gained recognition as a prominent supplier of NSB4904DW1T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSB4904DW1T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSB4904DW1T1G ON Semiconductor

Name: NSB4904DW1T1G
Brand: ON Semiconductor
SKU: NSB4904DW1T1G_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

NSB4904DW1T1G electronic component of ON Semiconductor

NSB4904DW1T1G Bipolar Transistors - Pre-Biased

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See Product Specifications

Part No.	NSB4904DW1T1G
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - Pre-Biased
Description:	Bipolar Transistors - Pre-Biased SS BR XSTR
Datasheet:	NSB4904DW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3913 ea
Line Total: USD 0.39

Availability - 17162
Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

NSB4904DW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

17162

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 0.3913
10 : USD 0.2663
100 : USD 0.162
500 : USD 0.0924
1000 : USD 0.0682
3000 : USD 0.0594
6000 : USD 0.0517
9000 : USD 0.0473
24000 : USD 0.0407

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased

RoHS - XON

Y Y

Configuration

Dual Dual

Transistor Polarity

Npn, Pnp Npn, Pnp

Typical Input Resistor

47 Kohms 47 Kohms

Typical Resistor Ratio

1 1

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 323 - 6 SOT - 323 - 6

DC Collector/Base Gain hFE Min

80 80

Collector- Emitter Voltage VCEO Max

50 V 50 V

Continuous Collector Current

100 mA 100 mA

Peak DC Collector Current

100 mA 100 mA

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Nsb4904dw1 Nsb4904dw1

Packaging

Cut Tape Cut Tape

Qualification

Aec - Q101 Aec - Q101

Dc Current Gain Hfe Max

80 80

Height

0.9 mm 0.9 mm

Length

2 mm 2 mm

Width

1.25 mm 1.25 mm

Brand

On Semiconductor On Semiconductor

Number Of Channels

2 Channel 2 Channel

Product Type

Bjts - Bipolar Transistors - Pre - Biased Bjts - Bipolar Transistors - Pre - Biased

Factory Pack Quantity :

3000 3000

Subcategory

Transistors Transistors

Cnhts

8541100000 8541100000

Hts Code

8541100050 8541100050

Mxhts

85411001 85411001

Taric

8541100000 8541100000

Notes:- Show Stocked Products With Similar Attributes.

NSB4904DW1T1G Alternative Parts

We are delighted to provide the NSB4904DW1T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSB4904DW1T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount NSB4904DW1T1G, NSB4904DW1T2G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation P 187 (Note 1) mW D T = 25C 256 (Note 2) A Derate above 25C 1.5 (Note 1) mW/C 2.0 (Note 2) Thermal Resistance R 670 (Note 1) C/W JA Junction-to-Ambient 490 (Note 2) Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation P 250 (Note 1) mW D T = 25C 385 (Note 2) A Derate above 25C 2.0 (Note 1) mW/C 3.0 (Note 2) Thermal Resistance 493 (Note 1) C/W R JA Junction-to-Ambient 325 (Note 2) Thermal Resistance 188 (Note 1) C/W R JL Junction-to-Lead 208 (Note 2) Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 inch Pad.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
17162 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 0.3913 10 : USD 0.2663 100 : USD 0.162 500 : USD 0.0924 1000 : USD 0.0682 3000 : USD 0.0594 6000 : USD 0.0517 9000 : USD 0.0473 24000 : USD 0.0407

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