NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon NSB9435T1G, NSV9435T1G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W JunctiontoCase 42 R JC JunctiontoAmbient on 1 sq. (645 sq. mm) Collector pad on FR4 board material 80 R JA JunctiontoAmbient on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 board material 174 R JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 s T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 10 mAdc, I = 0 Adc) 30 C B EmitterBase Voltage V Vdc EBO (I = 50 Adc, I = 0 Adc) 6.0 E C Collector Cutoff Current I Adc CER (V = 25 Vdc) 20 CE (V = 25 Vdc, T = 125C) 200 CE J Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc) 700 BE ON CHARACTERISTICS (Note 1) CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 0.8 Adc, I = 20 mAdc) 0.155 0.210 C B (I = 1.2 Adc, I = 20 mAdc) 0.275 C B (I = 3.0 Adc, I = 0.3 Adc) 0.550 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 3.0 Adc, I = 0.3 Adc) 1.25 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.2 Adc, V = 4.0 Vdc) 1.10 C CE DC Current Gain h FE (I = 0.8 Adc, V = 1.0 Vdc) 125 220 C CE (I = 1.2 Adc, V = 1.0 Vdc) 110 C CE (I = 3.0 Adc, V = 1.0 Vdc) 90 C CE Resistor R1 7.5 10 12.5 k DYNAMIC CHARACTERISTICS Output Capacitance C pF ob (V = 10 Vdc, I = 0 Adc, f = 1.0 MHz) 100 150 CB E Input Capacitance C pF ib (V = 8.0 Vdc) 135 EB CurrentGain Bandwidth Product (Note 2) f MHz T (I = 500 mA, V = 10 V, F = 1.0 MHz) 110 C CE test 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. f = h f T FE test