MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors www.onsemi.com R1 = 10 k , R2 = 10 k PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 Transistor (BRT) contains a single transistor with a monolithic bias R 2 network consisting of two resistors a series base resistor and a Q 1 base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q 2 can reduce both system cost and board space. R 2 R 1 Features Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications MARKING DIAGRAMS Requiring Unique Site and Control Change Requirements 6 AEC-Q101 Qualified and PPAP Capable* SOT363 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 0A M CASE 419B Compliant 1 MAXIMUM RATINGS (T = 25C, common for Q1 and Q2, unless otherwise noted) A SOT563 Rating Symbol Max Unit 0A M CASE 463A CollectorBase Voltage V 50 Vdc CBO 1 CollectorEmitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C SOT963 Input Forward Voltage V 40 Vdc IN(fwd) M CASE 527AD Input Reverse Voltage V 10 Vdc IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 0A/F = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code* =PbFree Package ORDERING INFORMATION (Note: Microdot may be in either location) Device Package Shipping *Date Code orientation may vary depending up- MUN5111DW1T1G, SOT363 3,000 / Tape & Reel on manufacturing location. SMUN5111DW1T1G* NSVMUN5111DW1T3G* SOT363 10,000 / Tape & Reel NSBA114EDXV6T1G, SOT563 4,000 / Tape & Reel NSVBA114EDXV6T1G* NSBA114EDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2017 Rev. 3 DTA114ED/D FMUN5111DW1, NSBA114EDXV6, NSBA114EDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5111DW1 (SOT363) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5111DW1 (SOT363) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, (Note 1) R 493 C/W JA Junction to Ambient (Note 2) 325 Thermal Resistance, (Note 1) R 188 C/W JL Junction to Lead (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114EDXV6 (SOT563) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, C/W R JA Junction to Ambient (Note 1) 350 NSBA114EDXV6 (SOT563) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114EDP6 (SOT963) One Junction Heated Total Device Dissipation P D T = 25C (Note 4) 231 mW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, (Note 4) R 540 C/W JA Junction to Ambient (Note 5) 464 NSBA114EDP6 (SOT963) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 mW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, (Note 4) R 369 C/W JA Junction to Ambient (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2