X-On Electronics has gained recognition as a prominent supplier of NSBA114TDP6T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSBA114TDP6T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSBA114TDP6T5G ON Semiconductor

NSBA114TDP6T5G electronic component of ON Semiconductor
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See Product Specifications
Part No. NSBA114TDP6T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: ON Semiconductor Bipolar Transistors - Pre-Biased DUAL PBRT
Datasheet: NSBA114TDP6T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4538 ea
Line Total: USD 0.45 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 8000
Multiples : 8000
8000 : USD 0.1042

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3907
Multiples : 3907
3907 : USD 0.1042

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.4538
10 : USD 0.2775
100 : USD 0.168
500 : USD 0.1155
1000 : USD 0.0946
2500 : USD 0.0935
5000 : USD 0.0814
8000 : USD 0.0572

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 4220
Multiples : 1
4220 : USD 0.1111

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 4220
Multiples : 1
4220 : USD 0.1111

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 8000
Multiples : 8000
8000 : USD 0.066

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 4220
Multiples : 1
4220 : USD 0.1111

   
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We are delighted to provide the NSBA114TDP6T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSBA114TDP6T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 Dual PNP Bias Resistor Transistors www.onsemi.com R1 = 10 k , R2 = k PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R device and its external resistor bias network. The Bias Resistor 1 R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 R can reduce both system cost and board space. 1 Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count 6 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT363 OE M AEC-Q101 Qualified and PPAP Capable CASE 419B These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 0E M (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 CASE 463A 1 Rating Symbol Max Unit Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO M SOT963 Collector Current Continuous I 100 mAdc C CASE 527AD 1 Input Forward Voltage V 40 Vdc IN(fwd) Input Reverse Voltage V 5 Vdc IN(rev) 0E/T = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = Pb-Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending up- on manufacturing location. Device Package Shipping MUN5115DW1T1G, SOT363 3,000/Tape & Reel SMUN5115DW1T1G NSBA114TDXV6T1G SOT563 4,000/Tape & Reel NSBA114TDXV6T5G SOT563 8,000/Tape & Reel NSBA114TDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2017 Rev. 1 DTA114TD/D TMUN5115DW1, NSBA114TDXV6, NSBA114TDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5115DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5115DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114TDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBA114TDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114TDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBA114TDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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