X-On Electronics has gained recognition as a prominent supplier of NSBA123EF3T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSBA123EF3T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSBA123EF3T5G ON Semiconductor

NSBA123EF3T5G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSBA123EF3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP Bipolar Digital Transistor (BRT)
Datasheet: NSBA123EF3T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7229: USD 0.0675 ea
Line Total: USD 487.96 
Availability - 310400
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 7229  Multiples: 1
Pack Size: 1
Availability Price Quantity
310400
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 7229
Multiples : 1
7229 : USD 0.0675

   
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We are delighted to provide the NSBA123EF3T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSBA123EF3T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M Reduces Component Count CASE 318D  STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 XXX M CASE 318 Compliant  STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO  STYLE 3 CollectorEmitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C SC75 XX M CASE 463 Input Forward Voltage V 12 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 10 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 XX M device. If any of these limits are exceeded, device functionality should not be CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code*  =PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 5 DTA123E/DMUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2131T1G 6H SC59 3000 / Tape & Reel (PbFree) MMUN2131LT1G, NSVMMUN2131LT1G* A6H SOT23 3000 / Tape & Reel (PbFree) MUN5131T1G, NSVMUN5131T1G* 6H SC70/SOT323 3000 / Tape & Reel (PbFree) DTA123EET1G 6H SC75 3000 / Tape & Reel (PbFree) DTA123EM3T5G, NSVDTA123EM3T5G* 6H SOT723 8000 / Tape & Reel (PbFree) NSBA123EF3T5G P (180)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ** (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323; Minimum Pad 200 (2) SC59; Minimum Pad (1) (2) (3) (4) (5) (3) SOT23; Minimum Pad 2 150 (4) SOT1123; 100 mm , 1 oz. copper trace (5) SOT723; Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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