X-On Electronics has gained recognition as a prominent supplier of NSBA124EDXV6T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSBA124EDXV6T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSBA124EDXV6T1G ON Semiconductor

NSBA124EDXV6T1G electronic component of ON Semiconductor
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Part No.NSBA124EDXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
Datasheet: NSBA124EDXV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.352 ea
Line Total: USD 0.35 
Availability - 7710
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7710
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.352
10 : USD 0.3432
1000 : USD 0.0979
4000 : USD 0.0858
8000 : USD 0.0594
24000 : USD 0.055
100000 : USD 0.0528

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSBA124EDXV6T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSBA124EDXV6T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5112DW1, NSBA124EDXV6, NSBA124EDP6 Dual PNP Bias Resistor Transistors www.onsemi.com R1 = 22 k , R2 = 22 k PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R 1 device and its external resistor bias network. The Bias Resistor R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 R can reduce both system cost and board space. 1 Features (4) (5) (6) S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable MARKING DIAGRAMS Simplifies Circuit Design 6 Reduces Board Space SOT363 0B M Reduces Component Count CASE 419B These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 (T = 25C, common for Q1 and Q2, unless otherwise noted) 0B M A CASE 463A Rating Symbol Max Unit 1 CollectorBase Voltage V 50 Vdc CBO CollectorEmitter Voltage V 50 Vdc CEO SOT963 m Collector Current Continuous I 100 mAdc M C CASE 527AD Input Forward Voltage V 40 Vdc IN(fwd) 1 Input Reverse Voltage V 10 Vdc IN(rev) 0B/m = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be =PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending up- on manufacturing location. Device Package Shipping MUN5112DW1T1G, SOT363 3,000 / Tape & Reel SMUN5112DW1T1G NSBA124EDXV6T1G SOT563 4,000 / Tape & Reel NSBA124EDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2017 Rev. 1 DTA124ED/DMUN5112DW1, NSBA124EDXV6, NSBA124EDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5112DW1 (SOT363) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5112DW1 (SOT363) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, (Note 1) R 493 C/W JA Junction to Ambient (Note 2) 325 Thermal Resistance, (Note 1) R 188 C/W JL Junction to Lead (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA124EDXV6 (SOT563) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, C/W R JA Junction to Ambient (Note 1) 350 NSBA124EDXV6 (SOT563) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA124EDP6 (SOT963) One Junction Heated Total Device Dissipation P D T = 25C (Note 4) 231 mW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, (Note 4) R 540 C/W JA Junction to Ambient (Note 5) 464 NSBA124EDP6 (SOT963) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 mW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, (Note 4) R 369 C/W JA Junction to Ambient (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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