Q MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 10 k , R2 = 47 k NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 R 2 Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors a series base resistor and a Q 1 base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. R 2 R 1 Features Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count MARKING DIAGRAMS S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 6 AEC-Q101 Qualified and PPAP Capable* 14 M SOT363 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 419B Compliant 1 MAXIMUM RATINGS (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted) A 1 2 Rating Symbol Max Unit SOT563 14 M CASE 463A Collector-Base Voltage V 50 Vdc CBO 1 Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C Input Forward Voltage V 40 Vdc IN(fwd) SOT963 M Input Reverse Voltage V 6 Vdc CASE 527AD IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 14/Q = Specific Device Code M = Date Code* ORDERING INFORMATION = Pb-Free Package Device Package Shipping (Note: Microdot may be in either location) MUN5314DW1T1G, SOT363 3,000 / Tape & Reel *Date Code orientation may vary depending up- SMUN5314DW1T1G* on manufacturing location. NSVMUN5314DW1T3G* SOT363 10,000 / Tape & Reel NSBC114YPDXV6T1G, SOT563 4,000 / Tape & Reel NSVBC114YPDXV6T1G* NSBC114YPDXV6T5G SOT563 8,000 / Tape & Reel NSBC114YPDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2017 Rev. 6 DTC114YP/DMUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5314DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5314DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC114YPDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC114YPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC114YPDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC114YPDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2