NSBC115TD Dual NPN Bias Resistor Transistors R1 = 100 k , R2 = k NPN Transistors with Monolithic Bias www.onsemi.com Resistor Network MARKING This series of digital transistors is designed to replace a single DIAGRAM device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias AFM SOT963 network consisting of two resistors a series base resistor and a CASE 527AD base emitter resistor. The BRT eliminates these individual 1 components by integrating them into a single device. The use of a BRT AF = Specific Device Code can reduce both system cost and board space. M = Date Code* Features *Date Code orientation may vary depending upon S and NSV Prefix for Automotive and Other Applications manufacturing location. Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable PIN CONNECTIONS Simplifies Circuit Design Reduces Board Space (3) (2) (1) Reduces Component Count These Devices are PbFree, Halogen Free/BFR Free and are RoHS R 1 R 2 Compliant Q 1 MAXIMUM RATINGS (T = 25C, common for Q1 and Q2, unless otherwise noted) A Q 2 Rating Symbol Max Unit R 2 R 1 CollectorBase Voltage V 50 Vdc CBO CollectorEmitter Voltage V 50 Vdc CEO (4) (5) (6) Collector Current Continuous I 100 mAdc C Input Forward Voltage V 40 Vdc IN(fwd) Input Reverse Voltage V 6 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NSBC115TDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2017 Rev. 2 DTC115TD/DNSBC115TD THERMAL CHARACTERISTICS Characteristic Symbol Max Unit NSBC115TDP6 (SOT 963) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 231 mW A (Note 2) 269 Derate above 25C (Note 1) 1.9 mW/C (Note 2) 2.2 Thermal Resistance, (Note 1) R 540 C/W JA Junction to Ambient (Note 2) 464 NSBC115TDP6 (SOT963) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 339 mW A (Note 2) 408 Derate above 25C (Note 1) 2.7 mW/C (Note 2) 3.3 Thermal Resistance, (Note 1) R 369 C/W JA Junction to Ambient (Note 2) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Both junction heated values assume total power is sum of two equally powered channels. www.onsemi.com 2