R MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 22 k , R2 = 22 k NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R Transistor (BRT) contains a single transistor with a monolithic bias 1 R 2 network consisting of two resistors a series base resistor and a Q 1 base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q 2 can reduce both system cost and board space. R 2 Features R 1 Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count MARKING DIAGRAMS S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 6 AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT363 12 M CASE 419B02 Compliant MAXIMUM RATINGS 1 (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted) A 1 2 Rating Symbol Max Unit SOT563 Collector-Base Voltage V 50 Vdc 12 M CBO CASE 463A Collector-Emitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C Input Forward Voltage V 40 Vdc IN(fwd) SOT963 Input Reverse Voltage V 10 Vdc M IN(rev) CASE 527AD Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 12/R = Specific Device Code ORDERING INFORMATION M = Date Code* Device Package Shipping = Pb-Free Package MUN5312DW1T1G, SOT363 3,000 / Tape & Reel (Note: Microdot may be in either location) SMUN5312DW1T1G* *Date Code orientation may vary depending NSVMUN5312DW1T3G* SOT363 10,000 / Tape & Reel upon manufacturing location. MUN5312DW1T2G, SOT363 3,000 / Tape & Reel NSVMUN5312DW1T2G* NSBC124EPDXV6T1G, SOT563 4,000 / Tape & Reel NSVBC124EPDXV6T1G* NSBC124EPDXV6T5G SOT563 8,000 / Tape & Reel NSBC124EPDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2017 Rev. 5 DTC124EP/DMUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5312DW1 (SOT363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5312DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC124EPDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC124EPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC124EPDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC124EPDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2